LESHAN RADIO COMPANY, LTD.
2-Input OR Gate
MC74VHC1G32
The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology . It achieves
high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G32 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 60; Equivalent Gates = 15
= 3.7 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
SOT–23/TSOP–5/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
V4
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V4
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL L
LH H
HL H
CC
HH H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH32–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G32
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to 7.0 V
DC Output Voltage V CC=0 – 0.5 to 7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
NORMALIZED FAILURE RATE
1 1 0 100 1000
140 8,900 1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VH32–2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G32
DC ELECTRICAL CHARACTERISTICS
V
CC
T A = 25°C T A <
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
Minimum High–Level 2.0 1.5 1.5 1.5 V
IH
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
5.5 3.85 3.85 3.85
V
Maximum Low–Level 2.0 0.5 0.5 0.5 V
IL
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
V
V
I
Minimum High–Level V
OH
Output Voltage I
= V
V
Maximum Low–Level
OL
or V
IN
IH
Output Voltage I
= V
V
Maximum Input V
IN
or V
IN
IH
= V
or V
IN
IH
IL
= – 50 µA 3.0 2.9 3.0 2.9 2.9
OH
IL
V
= V
or V
IN
IH
IL
I
= –4 mA 3.0 2.58 2.48 2.34
OH
I
= –8 mA 4.5 3.94 3.80 3.66
OH
V
= V
or V
IN
IH
IL
= 50 µA 3.0 0.0 0.1 0.1 0.1
OL
IL
V
= V
or V
IN
IH
IL
I
= 4 mA 3.0 0.36 0.44 0.52
OL
I
= 8 mA 4.5 0.36 0.44 0.52
OL
= 5.5 V or GND 0 to5.5 ±0.1 ±1.0 ±1.0 µA
IN
2.0 1.9 2.0 1.9 1.9 V
4.5 4.4 4.0 4.4 4.4
2.0 0.0 0.1 0.1 0.1 V
4.5 0.0 0.1 0.1 0.1
Leakage Current
I
Maximum Quiescent V
CC
IN
= V
or GND 5.5 2.0 20 40 µA
CC
Supply Current
85°C –55°C<TA<
125°C
AC ELECTRICAL CHARACTERISTICS C
Symbol
t
PLH
t
PHL
Parameter T est Conditions Min Typ Max Min Max Min Max Unit
, Maximum V
= 3.3± 0.3 V C L = 15 pF 4.8 7.9 9.5 11.5 ns
CC
Propagation Delay, C L = 50 pF 6.1 1 1.4 13.0 15.5
= 50 pF, Input t r = t f = 3.0 ns
load
= 25°C T A <
T
A
85°C –55°C<TA<125°C
Input A or B to Y
V
= 5.0± 0.5 V C L = 15 pF 3.7 5.5 6.5 8.0
CC
= 50 pF 4.4 7.5 8.5 10.0
C
L
C
Maximum Input 5.5 10 10 10 pF
IN
Capacitance
Typical @ 25°C, V
C
PD
6. C
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. Average operating current can be obtained by the equation: I
load dynamic power consumption; P D = C
Power Dissipation Capacitance (Note 6) 11 pF
= C
• V
•
f
CC
2
• V
• f
CC
+ I
in
PD
CC
• V
CC(OPR)
CC
PD
.
= 5.0 V
CC
+ I
.
C
in
is used to determine the no–
CC
PD
VH32–3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G32
Figure 4. Switching Waveforms
DEVICE ORDERING INFORMATION
Device
Order Number
MC74VHC1G32DFT1
MC74VHC1G32DFT2
MC74VHC1G32DFT4
MC74VHC1G32DTT1
MC74VHC1G32DTT3
Circuit
Indicator
MC 74 VHC1G 32 DF T1
MC 74 VHC1G 32 DF T2
MC 74 VHC1G 32 DF T4
MC 74 VHC1G 32 DT T1
MC 74 VHC1G 32 DT T3
Temp
Range
Identifier
Device Nomenclature
Technology
Device
Function
*Includes all probe and jig capacitance
Figure 5. Test Circuit
Package T yp e
(Name/SOT#/
Common Name)
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SOT–23/TSOPS/
Package
Suffix
T ape &
Reel
Suffix
SC–59
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
VH32–4/4
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