LRC MC74VHC1G08DTT1, MC74VHC1G08DTT3, MC74VHC1G08DFT4, MC74VHC1G08DFT1, MC74VHC1G08DFT2 Datasheet
LESHAN RADIO COMPANY, LTD.
2-Input AND Gate
MC74VHC1G08
The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15
= 3.5 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
5
4
1
2
TSOP–5/SOT–23/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
V2
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V2
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL L
LH L
HL L
CC
HH H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH8–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G08
MAXIMUM RA TINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
V
IN
V
OUT
T
A
t r ,t
f
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to 7.0 V
DC Output Voltage V CC=0 – 0.5 to 7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction Temperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 7.0 V
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Ho urs Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
NORMALIZED FAILURE RATE
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH8–2/4
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