LRC MC74VHC1G07DTT1, MC74VHC1G07DTT3, MC74VHC1G07DFT1, MC74VHC1G07DFT2, MC74VHC1G07DFT4 Datasheet
Noninverting Buffer with
LESHAN RADIO COMPANY, LTD.
Open Drain Output
The MC74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology . It
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer and an open drain output which provides the capability to set the
output switching level. This allows the MC74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V
using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t
• Low Internal Power Dissipation: I
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FET = 105; Equivalent Gate = 26
= 3.8 ns (Typ) at V
PD
= 5 V
CC
= 2 mA (Max) at T A = 25°C
CC
MC74VHC1G07
CC
and 7 V
MARKING DIAGRAMS
5
4
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
5
4
Pin 1
d = Date Code
V7
d
Figure 1. Pinout (Top View)
1
2
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1NC
2 IN A
3 GND
4 OUT Y
5V
d
V7
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AY
LL
HZ
CC
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
VH7–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G07
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage – 0.5 to + 7.0 V
DC Input V oltage – 0.5 to +7.0 V
DC Output Voltage – 0.5 to +7.0 V
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 7.0 V
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Ho urs Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
120 37,000 4.2
130 17,800 2.0
1
140 8,900 1.0
NORMALIZED FAILURE RATE
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH7–2/4
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