LRC MC74VHC1G03DFT1, MC74VHC1G03DTT1, MC74VHC1G03DTT3, MC74VHC1G03DFT2, MC74VHC1G03DFT4 Datasheet
2–Input NAND Gate with
LESHAN RADIO COMPANY, LTD.
Open Drain Output
The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching
level. This allows the MC74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V
resistor and power supply.
The MC74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t
• Low Internal Power Dissipation: I
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
= 3.6 ns (Typ) at V
PD
= 5 V
CC
= 2 mA (Max) at T A = 25°C
CC
MC74VHC1G03
and 7 V using an external
CC
MARKING DIAGRAMS
5
4
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
5
4
Pin 1
d = Date Code
VP
d
Figure 1. Pinout (Top View)
1
2
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
VP
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL Z
LH L
HL L
CC
HH L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH3–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G03
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T stg Storage temperature –65 to +150 °C
V
ESD
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
V
IN
V
OUT
T
A
t r ,t
f
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to 7.0 V
DC Output Voltage V CC=0 – 0.5 to 7.0 V
High or Low State –0.5 to V cc + 0.5
Input Diode Current –20 mA
Output Diode Current V
< GND; V
OUT
OUT
> V
CC
+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V
and GND +50 mA
CC
Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 125°C (Note 5) ± 500 mA
CC
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 7.0 V
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Ho urs Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
NORMALIZED FAILURE RATE
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH3–2/4
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