LRC MC74VHC1G00DTT1, MC74VHC1G00DFT2, MC74VHC1G00DFT Datasheet
LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate
MC74VHC1G00
The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology . It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
= 3.0 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
SOT–23/TSOP–5/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
V1
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V1
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL H
LH H
HL H
CC
HH L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH0–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
θ
JA
P
D
MSL Moisture Sensitivity Level 1
F
R
V
ESD
I
LATCH–UP
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to V
DC Output Voltage – 0.5 to V
+ 0.5 V
CC
+ 0.5 V
CC
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Sink Current ± 12.5 mA
DC Supply Current per Supply Pin ± 25 mA
Storage Temperature Range – 65 to + 150 °C
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
Junction T emperature Under Bias + 150 °C
Thermal Resistance SC–70/SC–88A (Note 1) 150 °C/W
TSOP–5 200
Power Dissipation in Still Air at 85C SC–70/SC–88A 150 mW
TSOP–5 230
Flammability Rating Oxygen Index: 30% – 35% UL 94 V–0 (0.125 in)
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 85C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Y ears
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
NORMALIZED FAILURE RATE
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VH0–2/4
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