LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate
MC74VHC1G00
The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology . It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
• High Speed: t
• Low Power Dissipation: I
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
= 3.0 ns (Typ) at V
PD
= 2 mA (Max) at T A = 25°C
CC
5
= 5 V
CC
MARKING DIAGRAMS
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
5
4
1
2
SOT–23/TSOP–5/SC–59
3
DT SUFFIX
CASE 483
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5V
d
V1
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
d
V1
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION T ABLE
Inputs Output
AB Y
LL H
LH H
HL H
CC
HH L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH0–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
θ
JA
P
D
MSL Moisture Sensitivity Level 1
F
R
V
ESD
I
LATCH–UP
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
DC Supply Voltage – 0.5 to + 7.0 V
DC Input Voltage – 0.5 to V
DC Output Voltage – 0.5 to V
+ 0.5 V
CC
+ 0.5 V
CC
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Sink Current ± 12.5 mA
DC Supply Current per Supply Pin ± 25 mA
Storage Temperature Range – 65 to + 150 °C
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
Junction T emperature Under Bias + 150 °C
Thermal Resistance SC–70/SC–88A (Note 1) 150 °C/W
TSOP–5 200
Power Dissipation in Still Air at 85C SC–70/SC–88A 150 mW
TSOP–5 230
Flammability Rating Oxygen Index: 30% – 35% UL 94 V–0 (0.125 in)
ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
Latch–Up Performance Above V
and Below GND at 85C (Note 5) ± 500 mA
CC
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
t r ,t
CC
IN
OUT
A
f
DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 V
CC
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V
= 3.3 ± 0.3 V 0 100 ns/V
CC
V
= 5.0 ± 0.5 V 0 20
CC
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hours Y ears
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
1
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
NORMALIZED FAILURE RATE
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
V
VH0–2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
Minimum High–Level 2.0 1.5 1.5 1.5 V
IH
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
5.5 3.85 3.85 3.85
V
Maximum Low–Level 2.0 0.5 0.5 0.5 V
IL
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
V
V
I
Minimum High–Level V
OH
Output Voltage I
V
= V
or V
IN
IH
Maximum Low–Level
OL
Output Voltage I
V
= V
or V
IN
IH
Maximum Input
IN
= V
or V
IN
IH
IL
= – 50 µA 3.0 2.9 3.0 2.9 2.9
OH
IL
= V
V
I
OH
I
OH
V
OL
IL
V
I
OL
I
OL
V
IN
or V
IN
IH
IL
= –4 mA 3.0 2.58 2.48 2.34
= –8 mA 4.5 3.94 3.80 3.66
= V
or V
IN
IH
IL
= 50 µA 3.0 0.0 0.1 0.1 0.1
= V
or V
IN
IH
IL
= 4 mA 3.0 0.36 0.44 0.52
= 8 mA 4.5 0.36 0.44 0.52
= 5.5 V or GND 0 to5.5
2.0 1.9 2.0 1.9 1.9 V
4.5 4.4 4.0 4.4 4.4
2.0 0.0 0.1 0.1 0.1 V
4.5 0.0 0.1 0.1 0.1
Leakage Current
I
Maximum Quiescent
CC
V
= V
or GND 5.5 2.0 20 40
IN
CC
Supply Current
AC ELECTRICAL CHARACTERISTICS C
Symbol
t
PLH
t
PHL
Parameter Test Conditions Min Typ Max Min Max Min Max Unit
, Maximum V
= 3.3± 0.3 V C L = 15 pF 4.5 7.9 9.5 1 1.0 ns
CC
Propagation Delay, C L = 50 pF 5.6 11.4 13.0 15.1
= 50 pF, Input t r = t f = 3.0 ns
load
Input A or B to Y
V
= 5.0± 0.5 V C L = 15 pF 3.0 5.5 6.5 8.0
CC
= 50 pF 3.8 7.5 8.5 10.0
C
L
C
Maximum Input 5.5 10 10 10 pF
IN
Capacitance
C
PD
Power Dissipation Capacitance (Note 6) 10 pF
T A = 25°C T A <
±0.1 ±1.0 ±1.0 µA
= 25°C T A <
T
A
Typical @ 25°C, V
85°C
–55°C to 125°C
85°C –55°C<TA <125°C
= 5.0 V
CC
µA
6. C
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. Average operating current can be obtained by the equation: I
load dynamic power consumption; P D = C
PD
•
2
V
•
f
+ I
CC
•
in
CC
CC(OPR)
V
CC
= C
• V
•
f
+ I
.
C
PD
CC
in
is used to determine the no–
CC
PD
.
*Includes all probe and jig capacitance.
A 1–MHz square input wave is recommended
for propagation delay tests.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
VH0–3/4
DEVICE ORDERING INFORMATION
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
Device Order
Number
MC74VHC1G00DFT
MC74VHC1G00DFT2
MC74VHC1G00DTT1
Device Nomenclature
Logic
Circuit
Indicator
MC 74 VHC1G 00 DF T1
MC 74 VHC1G 00 DF T2
MC 74 VHC1G 00 DT T1
T emp
Range
Identifier
Technology
Device
Function
Package
Suffix
Tape and
Reel Suffix
Package Type
(Name/SOT#/
Common Name)
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOP–5/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
VH0–4/4
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