LRC MV209, MBV109T1, MMBV109LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
3
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
MBV109T1 MMBV109LT1 MV209
Reverse Voltage V
Forward Current I
Device Dissipation P
@T A = 25°C 280 200 200 mW
Derate above 25°C 2.8 2.0 1.6 mW/°C
Junction Temperature T
Storage Temperature Range T
R
F
D
J
stg
DEVICE MARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
( I
= 10 µ Adc)
R
Reverse Voltage Leakage Current
( V R = 25Vdc)
Diode Capacitance Temperature Coefficient
(V R = 3.0 Vdc, f = 1.0 MHz)
1
ANODE
30 Vdc
200 mAdc
+125 °C
–55 to +150 °C
V
TC
(BR)R
I
R
C
30 — — Vdc
— — 0.1 mAdc
— 300 — ppm/°C
MMBV109LT1
MBV109T1
MV209
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
C T Diode Capacitance
VR =3.0Vdc, f =1.0MHz
p F
Q, Figure of
Merit
V R = 3.0Vdc
f = 50MHz
Capacitance
C
R,
Ratio
C3 / C
25
f=1.0MHz (Note 1)
Device Type Min Nom Max Min Min Max
MBV109T1, MMBV109LT1, MV209
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
26 29 32 200 5.0 6.5
MBV109. MMBV109*. MV209*–1/2
LESHAN RADIO COMPANY, LTD.
MBV109T1 MMBV109LT1 MV209
40
36
32
28
24
20
16
12
8
, CAPACITANCE (pF)
T
4
C
0
1 3 10 30 100
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
100
20
10
2.0
1.0
0.2
0.1
0.02
0.01
, REVERSE CURRENT (nA)
R
0.002
I
0.001
–60 –40 –20 0 20 40 60 80 100 120 140
1000
100
Q , FIGURE OF MERIT
10
10 100 1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
, DIODE CAPACITANCE (NORMALIZED)
T
C
0.96
–75 –50 –25 0 +25 +50 +75 +100 +125
T A , AMBIENT TEMPERATURE (°C)
Figure 3 . Leakage Current
T A , AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.
MBV109. MMBV109*. MV209*–2/2
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