LRC MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
• h FE, 100–300
• Low V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6
Q
1
MAXIMUM RATINGS
, 3 0.4 V
CE(sat)
See Table
Q
6
2
1
5
2
5
2
2
4
Q
1
3
MBT3904DW1T1 MBT3906DW1T1
4
Q
1
3
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6
5
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
6
Q
2
1
MBT3946DW1T1
*Q 1 same as MBT3906DW1T1
Q 2 same as MBT3904DW1T1
5
4
Q
2
3
4
1
Rating Symbol Voltage Unit
Collector–Emitter Voltage V
CEO
V
MBT3904DW1T1 (NPN) 40
MBT3906DW1T1 (PNP) –40
Collector–Base Voltage V
CBO
V
MBT3904DW1T1 (NPN) 60
MBT3906DW1T1 (PNP) –40
Emitter–Base Voltage V
EBO
V
MBT3904DW1T1 (NPN) 6.0
MBT3906DW1T1 (PNP) –5.0
Collector Current -Continuous I
C
mAdc
MBT3904DW1T1 (NPN) 200
MBT3906DW1T1 (PNP) –200
Electrostatic Discharge ESD HBM>16000, V
MM>2000
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation(1) P
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature
R
T J , T
D
θJA
stg
150 mW
833 °C/W
–55 to +150 °C
MBT3904DW1T1 SOT–363 3000 Units/Reel
MBT3906DW1T1 SOT–363 3000 Units/Reel
MBT3946DW1T1 SOT–363 3000 Units/Reel
ORDERING INFORMA TION
Device Package Shipping
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
MBT3904–1/12
LESHAN RADIO COMPANY, LTD.
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2) V
(I C = 1.0 mAdc, I B = 0) MBT3904DW1T1 (NPN) 40 —
(I C = –1.0 mAdc, I B = 0) MBT3906DW1T1 (PNP) –40 —
Collector–Base Breakdown Voltage V
(I C = 10 µAdc, I E = 0) MBT3904DW1T1 (NPN) 60 —
(I C = –10 µAdc, I E = 0) MBT3906DW1T1 (PNP) –40 —
Emitter–Base Breakdown Voltage V
(I E = 10 µAdc, I C = 0) MBT3904DW1T1 (NPN) 6.0 —
(I E = –10 µAdc, I C = 0) MBT3906DW1T1 (PNP) –5.0 —
Base Cutoff Current I
(V
= 30 Vdc, V
CE
(V
= –30 Vdc, V
CE
= 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
EB
Collector Cutoff Current I
(V
= 30 Vdc, V
CE
(V
= –30 Vdc, V
CE
= 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
EB
ON CHARACTERISTICS (2)
DC Current Gain h
(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 50 mAdc, V
(I C = 100 mAdc, V
(I C = –0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –50 mAdc, V
(I C = –100 mAdc, V
= 1.0 Vdc) MBT3904DW1T1 (NPN) 40 —
CE
= 1.0 Vdc) 70 —
CE
= 1.0 Vdc) 100 —
CE
= 1.0 Vdc) 60 —
CE
= 1.0 Vdc) 30 —
CE
= –1.0 Vdc) MBT3906DW1T1 (PNP) 60 —
CE
= –1.0 Vdc) 80 —
CE
= –1.0 Vdc) 100 —
CE
= –1.0 Vdc) 60 —
CE
= –1.0 Vdc) 30 —
CE
Collector–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) — 0.2
(I C = 50 mAdc, I B = 5.0 mAdc) — 0.3
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) — – 0.25
(I C = –50 mAdc, I B = –5.0 mAdc) — –0.4
Base–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) 0.65 0.85
(I C = 50 mAdc, I B = 5.0 mAdc) — 0.95
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) –0.65 –0.85
(I C = –50 mAdc, I B = –5.0 mAdc) — –0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(I C = 10 mAdc, V
f = 100 MHz)
(I C = –10 mAdc, V
f = 100 MHz)
Output Capacitance C
(V
= 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 4.0
CB
(V
= –5.0 Vdc, I E = 0, MBT3906DW1T1 (PNP) — 4.5
CB
f = 1.0 MHz)
Input Capacitance C
(V
= 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 8.0
EB
(V
= –0.5 Vdc, I C = 0, f = 1.0 MHz)
EB
2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%.
= 20 Vdc, MBT3904DW1T1 (NPN) 300 —
CE
= –20 Vdc, MBT3906DW1T1 (PNP) 250 —
CE
MBT3906DW1T1 (PNP) — 10.0
(BR)CEO
(BR)CBO
(BR)EBO
BL
CEX
FE
CE(sat)
BE(sat)
T
obo
ibo
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
pF
MBT3904–2/12
LESHAN RADIO COMPANY, LTD.
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
Input Impedance h ie k Ω
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 10
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 2.0 12
Voltage Feedback Ratio h re X 10
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 0.5 8.0
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 0.1 10
Small–Signal Current Gain h fe —
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 100 400
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 100 400
Output Admittance h oe µmhos
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 40
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 3.0 60
Noise Figure NF dB
(V CE = 5.0 Vdc, I C = 100 µAdc, MBT3904DW1T1 (NPN) — 5.0
R S = 1.0 k W, f = 1.0 kHz)
(V CE = –5.0 Vdc, I C = –100 µAdc, MBT3906DW1T1 (PNP) — 4.0
R S = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc) MBT3904DW1T1 (NPN) t d —35ns
(V CC = –3.0 Vdc, V BE = 0.5 Vdc) MBT3906DW1T1 (PNP) — 35
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) MBT3904DW1T1 (NPN) t r —35ns
(I C = –10 mAdc, I B1 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 35
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) MBT3904DW1T1 (NPN) t s — 200 ns
(V CC = –3.0 Vdc, I C = –10 mAdc) MBT3906DW1T1 (PNP) — 225
Fall Time (I B1 = I B2 = 1.0 mAdc) MBT3904DW1T1 (NPN) t f —50ns
(I B1 = I B2 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 70
–4
MBT3904–3/12
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