LRC M1MA152WKT1, M1MA151WKT1 Datasheet

Common Anode Silicon Dual Switching diodes
LESHAN RADIO COMPANY, LTD.
These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
Fast t rr , < 3.0 ns
Low C
, < 2.0 pF
D
Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE 3
2 1 ANODE
MAXIMUM RATINGS (T
= 25°C)
A
Rating Symbol Value Unit
R
40 Vdc
M1MA152WAT1 80
Peak Reverse Voltage M1MA151WAT1 V
RM
40 Vdc
M1MA152WAT1 80
Forward Current Single I
F
100 mAdc
Dual 150
Peak Forward Current Single I
FM
225 mAdc
Dual 340
Peak Forward Surge Current Single I
FSM
(1)
500 mAdc
Dual 750
THERMAL CHARACTERISTICS
Rating Symbo lMax Unit
Power Dissipation P Junction Temperature T Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
A
D
J
stg
= 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA151WAT1 I
M1MA152WAT1 V R = 75 V 0.1 Forward Voltage V Reverse Breakdown Voltage M1MA151WAT1 V
M1MA152WAT1 80 — Diode Capacitance C Reverse Recovery Time t
1. t = 1 SEC
2. t
Test Circuit
rr
200 mW 150 °C
-55 to +150 °C
R
F
R
D (2)
rr
V R = 0, f = 1.0 MHz 2.0 pF
I F = 10 mA, V R = 6.0 V, — 3.0 ns
R L = 100, I
V R = 35 V 0.1 µAdc
I F = 100 mA 1.2 Vdc
I R = 100 µA 40 Vdc
= 0.1 I
rr
M1MA151WKT1 M1MA152WKT1
SC-59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
CASE 318D–03, STYLE3
SC–59
R
H4–1/2
LESHAN RADIO COMPANY, LTD.
M1MA151WKT1 M1MA152WKT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT
R
L
DEVICE MARKING—EXAMPLE
Marking Symbol
Type No. 151WK 152WK
Symbol M T M U
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
INPUT PULSE
t
r
10%
90%
V
R
t p = 2 µs
t
= 0.35 ns
r
MT
OUTPUT PULSE
t
p
I
t
F
t
rr
= 0.1 I
I
rr
I F = 10 mA V
= 6 V
R
= 100
R
L
t
R
X
H4–2/2
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