LRC M1MA152KT1, M1MA151KT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications.
• Fast t rr , < 3.0 ns
• Low C D , < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
2 1
ANODE NO CONNECTION
MAXIMUM RATINGS (T
= 25°C)
A
Rating Symbol Value Unit
Reverse Voltage M1MA151KT1 V
R
M1MA152KT1 80
Peak Reverse Voltage M1MA151KT1 V
RM
M1MA152KT1 80
Forward Current I
Peak Forward Current I
Peak Forward Surge Current I
F
FM
FSM
THERMAL CHARACTERISTICS
Rating Symbo lMax Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
= 25°C)
A
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA151KT1 I
R
M1MA152KT1 V R = 75 V — 0.1
Forward Voltage V
Reverse Breakdown Voltage M1MA151KT1 V
F
R
M1MA152KT1 80 —
Diode Capacitance C
Reverse Recovery Time t
D
(2)
rr
V R = 0, f = 1.0 MHz — 2.0 pF
I F = 10 mA, V R = 6.0 V, — 3.0 ns
R L = 100Ω, I
1. t = 1 SEC
2. t
Test Circuit
rr
D
J
stg
V R = 35 V — 0.1 µAdc
I F = 100 mA — 1.2 Vdc
I R = 100 µA 40 — Vdc
(1)
= 0.1 I
rr
M1MA151KT1
M1MA152KT1
SC-59 P ACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
CASE 318D–03, STYLE2
SC–59
40 Vdc
40 Vdc
100 mAdc
225 mAdc
500 mAdc
200 mW
150 °C
-55 to +150 °C
R
H2–1/2
LESHAN RADIO COMPANY, LTD.
M1MA151KT1 M1MA152KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT
R
L
DEVICE MARKING—EXAMPLE
Marking Symbol
Type No. 151K 152K
Symbol M H M I
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
INPUT PULSE
t
r
10%
90%
V
R
t p = 2 µs
= 0.35 ns
t
r
MH
OUTPUT PULSE
t
p
I
t
F
t
rr
= 0.1 I
I
rr
I F = 10 mA
V
= 6 V
R
= 100 Ω
R
L
t
R
X
H2–2/2
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