LRC M1MA151AT1, M1MA152AT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use
in ultra high speed switching applications. These devices are
housed in the SC-59 package which is designed for low power
surface mount applications.
• Fast t
• Low C
• Available in 8 mm Tape and Reel
, < 3.0 ns
rr
, < 2.0 pF
D
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
ANODE
3
M1MA151AT1
M1MA152AT1
SC-59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
CASE 318D–03, STYLE4
SC–59
2 1
CATHODE NO CONNECTION
MAXIMUM R ATINGS (T
= 25°C)
A
Rating Symbol Value Unit
Reverse Voltage M1MA151AT1 V
M1MA152AT1 80
Peak Reverse Voltage M1MA151AT1 V
M1MA152AT1 80
Forward Current I
Peak Forward Current I
Peak Forward Surge Current I
THERMAL CHARACTERISTICS
Rating Symbo lMax Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA151AT1 I
M1MA152AT1 V R = 75 V — 0.1
Forward Voltage V
Reverse Breakdown Voltage M1MA151AT1 V
M1MA152AT1 80 —
Diode Capacitance C
Reverse Recovery Time t
1. t = 1 SEC
2. t
Test Circuit
rr
= 25°C)
A
R
F
R
D
(2)
rr
V R = 0, f = 1.0 MHz — 2.0 pF
I F = 10 mA, V R = 6.0 V, — 3.0 ns
R L = 100Ω, I
40 Vdc
40 Vdc
100 mAdc
225 mAdc
500 mAdc
200 mW
150 °C
-55 to +150 °C
FSM
R
RM
F
FM
(1)
D
J
stg
V R = 35 V — 0.1 µAdc
I F = 100 mA — 1.2 Vdc
I R = 100 µA 40 — Vdc
= 0.1 I
rr
R
H1–1/2
LESHAN RADIO COMPANY, LTD.
M1MA151AT1 M1MA152AT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT
R
L
DEVICE MARKING
Marking Symbol
Type No. 151A 152A
Symbol MA M B
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
INPUT PULSE
t
r
10%
90%
V
R
t p = 2 µs
t
r
t
p
= 0.35 ns
MA
X
OUTPUT PULSE
I
t
F
t
rr
= 0.1 I
I
rr
I F = 10 mA
= 6 V
V
R
R
= 100 Ω
L
t
R
H1–2/2
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