查询L2SC4617QT1供应商
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
!!!!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
COLLECTOR
3
1
BASE
2
EMITTER
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
60 V
50
7
0.15
150
55~+150
−
V
V
A
W0.15
˚C
˚C
L2SC4617*T1
3
1
2
SC-89
!!!!
Electrical characteristics
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
!
!Device marking
!!
(Ta=25°C)
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
Min.
Typ. Max. Unit Conditions
60
50
7
120
−
−
−
−
−
−
−
−
−
−
−
180
−
2.0
L2SC4617QT1=BQ L2SC4617RT1=BR L2SC4617ST1=BS
values are classified as follows:
FE
h
!!!!
Item Q R S
FE
h
120~270 180~390 270~560
0.1
0.1
0.5
560
3.5
−
−
−
−
VI
V
V
µA
µA
V
−
MHz
pF
I
I
V
V
I
V
V
V
C
C
E
C/IB
=
50µA
=
1µA
=
50µA
CB
EB
CE
CE
CB
=
=7
=
=
=
60V
V
=
50mA/5mA
6V, I
C
=
12V, I
E
12V, I
E
1mA
=
2mA, f=30MHz
=
0A, f=1MHz
L2SC4617*T1-1/4
!!!!Electrical characterristic curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
25°C
100°C
−55°C
=
Ta
Fig.1 Grounded emitter propagation
characteristics
V
CE
=6V
BE
(V)
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics ( Ι )
LESHAN RADIO COMPANY, LTD.
L2SC4617*T1
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
(V)
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
20
CE
(V)
500
Ta=25°C
FE
200
100
50
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current ( Ι )
VCE=5V
500
FE
3V
1V
C
(mA)
200
100
50
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Ta=100°C
25°C
−55°C
C
VCE=
(mA)
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.5
(V)
CE(sat)
0.2
IC/IB=50
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.5 1 2 5 10 20 50 100 200
0.2
COLLECTOR CURRENT : I
20
10
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
C
(mA)
L2SC4617*T1-2/4