LRC L2N7002LT1G Schematic [ru]
Small Signal MOSFET
LESHAN RADIO COMPANY, LTD.
115 mAmps, 60 Volts
N–Channel SOT–23
•
Pb−Free Package is Available.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Drain Current
– Continuous T
– Continuous TC= 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp≤ 50 µs)
= 25°C (Note 1.)
C
V
DSS
DGR
I
DM
V
GSM
I
D
I
D
GS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ,T
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
= 25°C
A
P
P
D
θJA
D
θJA
stg
60 Vdc
60 Vdc
±115
±75
±800
±20
±40
225
1.8mWmW/°C
556 °C/W
300
2.4
417 °C/W
–ā55 to
+150
mAdc
Vdc
Vpk
mW
mW/°C
°C
L2N7002LT1G
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
DS(on)
N - Channel
= 7.5 W
3
2
Drain
3
702
W
21
R
1
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate Source
702 = Device Code
W = Work Week
ORDERING INFORMATION
Device Marking Shipping
L2N7002LT1G 702 3000 Tape & Reel
L2N7002LT3G 702
10000 Tape & Reel
1/4
LESHAN RADIO COMPANY, LTD.
(V
L2N7002LT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
= 0, ID = 10 µAdc)
GS
Zero Gate Voltage Drain Current TJ= 25°C
(V
= 0, VDS = 60 Vdc) TJ = 125°C
GS
Gate–Body Leakage Current, Forward
= 20 Vdc)
(V
GS
Gate–Body Leakage Current, Reverse
=–ā20 Vdc)
(V
GS
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
= VGS,ID = 250 µAdc)
(V
DS
On–State Drain Current
(V
DS
≥ 2.0 V
DS(on),VGS
= 10 Vdc)
Static Drain–Source On–State Voltage
(V
= 10 Vdc, ID = 500 mAdc)
GS
(VGS= 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
= 10 V, ID = 500 mAdc) TC= 25°C
(V
GS
(V
= 5.0 Vdc, ID = 50 mAdc) TC = 25°C
GS
TC = 125°C
T
= 125°C
C
Forward Transconductance
(V
DS
≥ 2.0 V
DS(on),ID
= 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
Output Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
Reverse Transfer Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Time
(Note 2.)
(VDD= 25 Vdc , ID^ 500 mAdc,
RG= 25 Ω, RL= 50 Ω,V
= 10 V)
gen
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(I
= 115 mAdc, VGS = 0 V)
S
Source Current Continuous
(Body Diode)
Source Current Pulsed I
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Symbol Min Typ Max Unit
V
(BR)DSS
I
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
V
DS(on)
r
DS(on)
C
C
C
t
d(on)
t
d(off)
V
DSS
g
FS
oss
rss
SD
I
SM
iss
S
60 – – Vdc
–
–
–
–
1.0
500
– – 100 nAdc
– – –100 nAdc
1.0 1.6 2.5 Vdc
500 – – mA
–
–
–
–
3.75
0.375
Ohms
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
13.5
80 – – mmhos
– 17 50 pF
– 10 25 pF
– 2.5 5.0 pF
– 7 20 ns
– 11 40 ns
– – –1.5 Vdc
– – –115 mAdc
– – –800 mAdc
µAdc
Vdc
2/4
LESHAN RADIO COMPANY, LTD.
TYPICAL ELECTRICAL CHARACTERISTICS
L2N7002LT1G
2.0
1.8
1.6
1.4
1.2
TA = 25°C
V
= 10 V
GS
9 V
8 V
1.0
0.8
0.6
V
DS
= 10 V
-ā55°C
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
V
DRAIN SOURCE VOLTAGE (VOLTS)
DS,
Figure 1. Ohmic Region
2.4
2.2
V
= 10 V
GS
2.0
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
STATIC DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
DS(on),
r
= 200 mA
I
D
-ā60 -ā20 +ā20 +ā60 +ā100 +ā140 -ā60 -ā20 +ā20 +ā60 +ā100 +ā140
T, TEMPERATURE (°C)
7 V
6 V
5 V
4 V
3 V
0.4
0.2
, DRAIN CURRENT (AMPS)
D
I
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th),
V
0.7
V
GATE SOURCE VOLTAGE (VOLTS)
GS,
Figure 2. Transfer Characteristics
V
DS
ID = 1.0 mA
T, TEMPERATURE (°C)
125°C
= V
25°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
GS
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
3/4
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