V ariable Capacitance Diode
for VCXO
LESHAN RADIO COMPANY, LTD.
HVC359
FEATURES
• High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
1
CA THODE
DEVICE MARKING
HVC359 = S
ABSOLUTE MAXIMUM RA TINGS (T
= 25°C)
A
Item Symbol Value Unit
Reversevoltage V
Junction temperature T
Storage temperature T
ELECTRICAL CHARACTERISTICS (T
= 25°C)
A
Item Symbol Min T yp Max Unit Test Condition
Reverse current I
Capacitance C
R1
I
R2
1
C
4
Capacitance ratio n 3.0 – – – C
Series resistance r
ESD-Capability
*1
Notes 1. Failure criterion ; I
s
– 80 – – V C =200pF , Both forward
≥ 20nA at V
R
2
ANODE
R
j
stg
15 V
125 °C
– 55 to +125 °C
–– 10nAV
– – 100 VR = 10V, TA = 60°C
24.8 – 29.8 pF VR = 1V, f = 1 MHz
6.0 – 8.3 VR = 4V, f = 1 MHz
– – 1.5 Ω VR = 4V, f = 100 MHz
=10 V
R
2
SOD– 523
= 10V
R
/ C
1
4
and reverse direction
1 pulse.
1
HVC359–1/2
LESHAN RADIO COMPANY, LTD.
HVC359
, REVERSE CURRENT (A)
R
I
Reverse voltage VR (V)
Fig.1 Reverse current Vs. Reverse voltage
C , CAPACITANCE (pF)
Reverse voltage VR (V)
Fig.2 Capacitance Vs. Reverse voltage
HVC359–2/2