LRC DTD143ES Datasheet
LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isola tion to allow
positive biasing of the input. They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device design
easy.
• Structure
PNP digital transistor (with built-in resistors)
•Equivalent circuit
IN
R1
OUT
R2
GND
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.6
+ 0.1
- 0.05
2.8
(3)
0.4
All terminals have same dimensions
DTD143EK
DTD143ES
0.8 + 0.1
0 ~ 0.1
0.6
0.15
+ 0.1
- 0.06
0.3 ~
DTD143EK
(1) GND
(2) IN
(3) OUT
IN
OUT
GND
Absolute maximum ratings(T
•
Parameter symbol
Supply voltage V
Input voltage V
Output current I
Power dissipation P
Junction temperature T
Storage temperature T
=25 °C)
a
cc
IN
C
d
j
stg
EIAJ: SC— 59
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.3
+ 0.1
- 0.05
2.4
(3)
0.4
All terminals have same dimensions
EIAJ: SOT— 23
limits( DTC143E )
KS
50 V
–10~+30 V
500 mA
200 300 mW
150 °C
–55~+150 °C
0.15
+ 0.1
- 0.06
unit
0.95
0.45 + 0.1
+ 0.2
- 0.1
0 ~ 0.1
0.2Min
(1) GND
(2) IN
(3) OUT
DTD143ES
P18–1/2
LESHAN RADIO COMPANY, LTD.
DTD143EK DTD143ES
Elecrical characteristics(Ta=25°C)
•
Parameter symbol Min. Typ. Max. Unit Conditions
Input voltage
V
V
Output Voltage V
Input current I
Output current I
DC current gain G
Input resistance R
Resistance ratio R
2
Transition frequency f
*Transition frequency of the device
ELECTRICAL CHARACTERISTIC CURVES
I(off)
I(on)
O(on)
I
O(off)
1
/ R
T
— — 0.5
3— — V O= 0.3V, I O=20mA
V CC= 5V, I O=100µA
V
— 0.1 0.3 V I O / I I =50mA/2.5mA
— — 1.8 mA V I=5V
— — 0.5 µAV CC= 50V, V I= 0 V
47 — — — V O= 5V, I O= 50mA
I
3.29 4.7 6.11 KΩ —
0.8 1 1.2 — —
1
— 200 — MHz V CE=10V, I E= –50 mA, f=100MHz*
100
50
20
V
= 0.3V
O
( V )
10
I(on)
5
2
1
0.5
0.2
INPUT VOL TAGE: V
0.1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
T A = –40°C
25°C
100°C
OUTPUT CURRENT: I O (A)
Figure 1. Input voltage vs.output current
(ON characteristics)
1K
500
200
I
100
50
20
T
A
= 100°C
25°C
–40°C
V O = 5 V
10m
5m
T A = 100°C
2m
( A )
1m
O
500µ
200µ
100µ
50µ
20µ
10µ
5µ
OUTPUT CURRENT: I
2µ
1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
25°C
–40°C
INPUT VOL TAGE: V
I(ON)
(V)
Figure 2. Output current vs.input voltage
(OFF characteristics)
1.0
0.5
0.2
( V )
O(on)
0.05
0.02
0.1
T
A
= 100°C
25°C
–40°C
V
= 5 V
CC
I O / I I = 20
10
5
2
DC CURRENT GAIN: G
1
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT: I O (A)
Figure 3. DC current gain vs.output current
0.01
.005
.002
OUTPUT VOLTAGE: V
.001
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT: I O (A)
Figure 4. Output voltage vs.output current
P18–2/2
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