LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to
allow positive biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device design
easy.
•
Structure
PNP digital transistor (with built-in resistors)
•Equivalent circuit
R1
IN
R2
IN
OUT
GND(+)
OUT
GND(+)
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.6
+ 0.1
- 0.05
2.8
(3)
0.4
All terminals have same dimensions
EIAJ: SC— 59
DTC114EKA
DTC114ECA
+ 0.2
1.1
- 0.1
0.8 + 0.1
0 ~ 0.1
(1) GND
0.6
0.15
+ 0.1
- 0.06
(2) IN
(3) OUT
0.3 ~
DT A1 14EKA
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.3
+ 0.1
- 0.05
2.4
(3)
0.4
All terminals have same dimensions
0.15
0.95
+ 0.1
- 0.06
+ 0.2
- 0.1
0.45 + 0.1
0 ~ 0.1
EIAJ: SOT—23
Absolute maximum ratings(T
•
Parameter symbol limits unit
Supply voltage V
Input voltage V
Output current
Power dissipation P
Junction temperature T
Storage temperature T
I
C(Max.)
a
cc
IN
I
O
d
j
stg
=25 °C)
–50 V
–10~+40 V
50
100
mA
200 mW
150 °C
–55~+150 °C
0.2Min
(1) GND
(2) IN
(3) OUT
DTA114ECA
P11–1/2
LESHAN RADIO COMPANY, LTD.
DTC114EKA DTC114ECA
Elecrical characteristics(Ta=25°C)
•
Parameter symbol Min. Typ. Max. Unit Conditions
V
Input voltage
Output Voltage V
Input current I
Output current I
I(off)
V
I(on)
O(on)
I
O(off)
DC current gain G
Input resistance R
1
Resistance ratio R 2 / R
Transition frequency f
T
*Transition frequency of the device
ELECTRICAL CHARACTERISTIC CURVES
— — 0.5
3— — V
VCC= 5V,IO= 100µA
V
= 0.3V,IO= 10mA
O
— 0.1 0.3 V I O/ I I = 10mA / 0.5mA
— — 0.88 mA V I= 5V
— — 0.5 µAV CC= 50V,V I = 0 V
30 — — — V O= 5V, I O= 5mA
I
71013KΩ —
0.8 1 1.2 — —
1
— 250 — MHz V CE= 10V, I E = –5mA, f=100MHz*
-100
-50
-20
V
O
= – 0.3V
( V )
-10
I(on)
-5
-2
-1
-0.5
-0.2
INPUT VOL TAGE: V
-0.1
T A = –40°C
25°C
100°C
-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m
OUTPUT CURRENT: I O (A)
Figure 1. Input voltage vs.output current
(ON characteristics)
1K
500
200
I
100
50
20
T A = 100°C
25°C
–40°C
V O = – 5 V
-10m
-5m
-2m
T A = 100°C
( A )
-1m
O
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
OUTPUT CURRENT: I
-2µ
-1µ
0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0
25°C
–40°C
INPUT VOL TAGE: V
I(ON)
(V)
Figure 2. Output current vs.input voltage
(OFF characteristics)
-1
-0.5
T
= 100°C
A
25°C
–40°C
( V )
O(on)
-0.05
-0.02
-0.2
-0.1
= – 5 V
V
CC
I O / I I = 20
10
5
2
DC CURRENT GAIN: G
1
-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m
OUTPUT CURRENT: I O (A)
Figure 3. DC current gain vs.output current
-0.01
-.005
-.002
OUTPUT VOLTAGE: V
-.001
-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m
OUTPUT CURRENT: I O (A)
Figure 4. Output voltage vs.output current
P11–2/2