LRC DTB143EK, DTB143EC Datasheet

LESHAN RADIO COMPANY, LTD.

Digital transistors (built-in resistors)

• Features

1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).

2) The bias resistors consist of thinfilm resistors with complete isolation to allow
positive biasing of the input. They also have the advantage of almost completely
eliminating parasitic effects.

3) Only the on/ off conditions need to be set for operation, making device design
easy.

• Structure

PNP digital transistor (with built-in resistors)

•Equivalent circuit

IN

IN

R1

OUT

R2

GND(+)

OUT

GND(+)

2.9 + 0.2

1.9+ 0.2

0.95+ 0.95

(2)

(1)

- 0.1

0.2

+ 0.2

+

1.6

+ 0.1

- 0.05

2.8

- 0.1

0.2

+ 0.2

+

1.3

2.4

(3)

0.4

All terminals have same dimensions

2.9 + 0.2

1.9+ 0.2

0.95+ 0.95

(2)

(1)

(3)

+ 0.1

0.4

- 0.05

EIAJ: SC— 59

DTB143EK
DTB143EC

+ 0.2

1.1

- 0.1

0.8 + 0.1

0 ~ 0.1

0.6

0.3 ~

DTB143EK

0 ~ 0.1

0.2Min

0.15

0.15

0.95

+ 0.1

- 0.06

+ 0.1

- 0.06

+ 0.2

- 0.1

0.45 + 0.1

(1) GND
(2) IN
(3) OUT

(1) GND
(2) IN
(3) OUT

All terminals have same dimensions

EIAJ: SOT— 23

Absolute maximum ratings(T

•

Parameter symbol limits unit
Supply voltage V

Input voltage V
Output current I
Power dissipation P
Junction temperature T
Storage temperature T

=25 °C)

a

cc

IN

C

d

j

stg

–50 V

–30~+10 V

–500 mA

200 300 mW

150 °C

–55~+150 °C

DTB143EC

P10–1/2

LESHAN RADIO COMPANY, LTD.

DTB143EK DTB143EC

Elecrical characteristics(Ta=25°C)

•

Parameter symbol Min. Typ. Max. Unit Conditions

V

Input voltage
Output Voltage V

Input current I
Output current I

I(off)

V

I(on)

O(on)

I

O(off)

DC current gain G
Input resistance R

1

Resistance ratio R 2 / R
Transition frequency f

T

*Transition frequency of the device

ELECTRICAL CHARACTERISTIC CURVES

— — –0.5
–3 — — V O= – 0.3V, I O=–20mA

V CC= – 5V, I O= –100µA

V

— — –0.3 V I O / I I =–50mA / –2.5mA
— — –1.8 mA V I = – 5V

— — –0.5 µAV
47 — — — V O = – 5V,I O = – 50mA

I

=– 50V,V I = 0 V

CC

3.29 4.7 6.11 KΩ —

0.8 1 1.2 — —

1

— 200 — MHz V

= –10V, I E= 5 mA,f=100MHz*

CE

-100

-50

-20

V

O

= – 0.3V

( V )

-10

I(on)

-5

-2

-1

-0.5

-0.2

INPUT VOL TAGE: V

-0.1

-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m

T A = –40°C

25°C

100°C

OUTPUT CURRENT: I O (A)

Figure 1. Input voltage vs.output current

(ON characteristics)

1K

500

= 100°C

T

200

I

100

50
20

A

25°C

–40°C

V O = – 5 V

-10m

-5m

T A = 100°C

-2m

( A )

-1m

O

-500µ

-200µ

-100µ

-50µ

-20µ

-10µ

-5µ

OUTPUT CURRENT: I

-2µ

-1µ
0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0

25°C

–40°C

INPUT VOL TAGE: V

I(ON)

(V)

Figure 2. Output current vs.input voltage

(OFF characteristics)

-1

-0.5

( V )

O(on)

-0.05

-0.02

-0.2

-0.1

T

A

= 100°C

25°C

–40°C

= – 5 V

V

CC

I O / I I = 20

10

5
2

DC CURRENT GAIN: G

1

-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m

OUTPUT CURRENT: I O (A)

Figure 3. DC current gain vs.output current

-0.01

-.005

-.002

OUTPUT VOLTAGE: V

-.001

-100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m

OUTPUT CURRENT: I O (A)

Figure 4. Output voltage vs.output current

P10–2/2