LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to
allow positive biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device design
easy.
•
Structure
PNP digital transistor (with built-in resistors)
•Equivalent circuit
IN
R1
R2
IN
OUT
GND(+)
OUT
GND(+)
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.6
+ 0.1
- 0.05
2.8
(3)
0.4
All terminals have same dimensions
EIAJ: SC— 59
DTA143EKA
DTA143ECA
+ 0.2
1.1
- 0.1
0.8 + 0.1
0 ~ 0.1
(1) GND
0.6
0.15
+ 0.1
- 0.06
(2) IN
(3) OUT
0.3 ~
DT A143EKA
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(2)
(1)
- 0.1
0.2
+ 0.2
+
1.3
+ 0.1
- 0.05
2.4
(3)
0.4
All terminals have same dimensions
0.15
0.95
+ 0.1
- 0.06
+ 0.2
- 0.1
0.45 + 0.1
0 ~ 0.1
EIAJ: SOT— 23
Absolute maximum ratings(T
•
Parameter symbol limits unit
Supply voltage V
Input voltage V
Output current
Power dissipation P
Junction temperature T
Storage temperature T
I
C(Max.)
a
cc
IN
I
O
d
j
stg
=25 °C)
–50 V
–30~+10 V
–100
–100
mA
200 mW
150 °C
–55~+150 °C
0.2Min
(1) GND
(2) IN
(3) OUT
DTA143ECA
P8–1/3
LESHAN RADIO COMPANY, LTD.
DTA143EKA DTA143ECA
Elecrical characteristics(Ta=25°C)
•
Parameter symbol Min. Typ. Max. Unit Conditions
V
Input voltage
Output Voltage V
Input current I
Output current I
DC current gain G
Input resistance R
Resistance ratio R 2 / R
Transition frequency f
*Transition frequency of the device
Packaging specifications
•
I(off)
V
I(on)
O(on)
I
O(off)
1
T
Package SC–59 SOT–23
Package type Taping Taping
Code T146 T116
Basic ordering
Part No. unit(pieces)
DTA143EKA O —
DT A143ECA — O
— — –0.5
–3 — — VO= – 0.3V,IO= – 20mA
— –0.1 –0.3 V I O/ I I = –10mA / –0.5mA
— — –1.8 mA V I= – 5V
— — –0.5 µAV CC= – 50V,V I = 0 V
20 — — — V O= – 5V,I O= – 10mA
I
3.29 4.7 6.11 KΩ —
0.8 1 1.2 — —
1
— 250 — MHz V CE= – 10V,I E = 5 mA,f=100MHz*
VCC= – 5V,IO= –100µA
V
3000 3000
P8–2/3