LRC BSS64LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Driver Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ , T
DEVICE MARKING
80 Vdc
120 Vdc
5.0 Vdc
100 mAdc
P
D
θJA
P
D
θJA
–55 to +150 °C
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
BSS64LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 4.0 mAdc )
Collector–Base Breakdown Voltage
(I C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I E = 100 µAdc )
Collector Cutoff Current I
( V CB = 90 Vdc ) — 0.1
( T A = 150°C ) — 500
Emitter Cutoff Current
( V EB = 4.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I
EBO
80 — Vdc
120 — Vdc
5.0 — Vdc
— 200 nAdc
nAdc
M40–1/2
LESHAN RADIO COMPANY, LTD.
BSS64LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 10 mAdc, V
= 1.0 Vdc)
CE
Collector–Emitter Saturation Voltage V
(I C = 4.0mAdc, I B = 0.4 mAdc) — 0.15
(I C = 50mAdc, I B = 15 mAdc) — 0.2
Forward Base–Emitter Voltage V
h
FE
CE(sat)
BE(sat)
20 — —
———
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 4.0 mAdc, V
= 10 Vdc, f = 20 MHz)
CE
Output Capacitance
(V
= 10 Vdc, f = 1.0 MHz)
CB
f
T
C
ob
60 — MHz
—20pF
Vdc
M40–2/2
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