LRC BCX70JLT1, BCX70KLT1, BCX70GLT1 Datasheet
General Purpose Transistors
NPN Silicon
3
COLLECTOR
LESHAN RADIO COMPANY, LTD.
BCX70GLT1
BCX70JLT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
45 Vdc
45 Vdc
5.0 Vdc
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
BCX70KLT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCX70GLT1 = AG ; BCX70JLT1 = AJ ; BCX70KLT1 = AK ;
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0mAdc, IE = 0 )
Emitter–Base Breakdown Voltage
(I E= 1.0 µAdc, I C = 0)
Collector Cutoff Current I
(VCE = 32 Vdc, )
(VCE = 32 Vdc, TA = 150°C )
Emitter Cutoff Current
(VEB = 4.0 Vdc, I C = 0 )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)EBO
I
CES
EBO
45 — Vdc
5.0 — Vdc
— 20 nAdc
—20µAdc
— 20 nAdc
M16–1/6
LESHAN RADIO COMPANY, LTD.
BCX70GLT1 BCX70JLT1 BCX70KLT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
( IC= 10 µAdc, VCE = 5.0 Vdc ) BCX70G –– —
BCX70J 40 ––
BCX70K 100 ––
( IC= 2.0 mAdc, VCE = 5.0 Vdc ) BCX70G 120 22 0
BCX70J 250 460
BCX70K 380 630
( IC= 50 mAdc, VCE = 1.0 Vdc ) BCX70G 60 —
BCX70J 90 ––
BCX70K 100 ––
Collector–Emitter Saturation Voltage V
( IC = 50 mAdc, IB = 1.25 mAdc ) — 0.55
( IC = 10 mAdc, IB = 0.25mAdc ) — 0.35
Base–Emitter Saturation Voltage V
( IC = 50 mAdc, IB = 1.25 mAdc ) 0.7 1.05
( IC = 50 mAdc, IB = 0.25mAdc ) 0.6 0.85
Base–Emitter On Voltage
( IC = 2.0 mAdc, V
= 0.5Vdc )
CE
V
FE
CE(sat)
BE(sat)
BE(on)
0.55 0.75 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
= 10 Vdc, I C = 0, f = 1.0 MHz)
CB
Small–Signal Current Gain h
(I C = 2.0 mAdc, V CE = 5.0 Vdc, f = 1.0 kHz)
BCX70G 125 250
BCX70J 250 500
BCX70K 350 700
Noise Figure
(V
= 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
CE
f
T
C
obo
FE
125 — MHz
— 4.5 pF
NF — 6.0 dB
—
Vdc
Vdc
—
SWITCHING CHARACTERISTICS
Turn–On Time
( I C= 10 mAdc; I B1= 1.0 mAdc )
Turn–Off T ime t
( I B2= 1.0 mAdc; V
=3.6Vdc; R 1 = R 2 = 5.0 kΩ ; R L =990Ω )
BB
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
– 0.5 V
+10.9 V
<1.0 ns
Figure 1. Turn–On Time
10 k
t
on
off
+3.0 V
275
C S < 4.0 pF*
10 < t
< 500 µs
DUTY CYCLE = 2%
1
0
– 9.1 V
t
*Total shunt capacitance of test jig and connectors
— 150 ns
— 800 ns
1
+10.9 V
10 k
1N916
<1.0 ns
Figure 2. Turn–Off Time
+3.0 V
275
C S < 4.0 pF*
M16–2/6
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