LRC BCX18LT1, BCX20LT1, BCX19LT1, BCX17LT1 Datasheet

General Purpose Transistors

LESHAN RADIO COMPANY, LTD.

PNP

BCX17LT1

3
COLLECTOR

1
BASE

2
EMITTER

1
BASE

MAXIMUM RATINGS

Value

Rating Symbol

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

BCX17LT 1 BCX18LT 1
BCX19LT 1 BCX20LT 1

45 25 Vdc
50 30 Vdc

5.0 5.0 Vdc

500 500 mAdc

DEVICE MARKING

BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2

3
COLLECTOR

2
EMITTER

Unit

BCX18LT1

NPN
BCX19LT1
BCX20LT1

Voltage and current are negative

for PNP transistors

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

P

D

θJA

P

D

θJA

stg

225 mW

1.8 mW/°C

556 °C/W

300 mW

2.4 mW/°C

417 °C/W

–55 to +150 °C

M15–1/2

LESHAN RADIO COMPANY, LTD.

PNP BCX17LT1 BCX18LT1
NPN BCX19LT1 BCX20LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage V
(I C = 10 mAdc, I B = 0) BCX17, 19 45 — —

BCX18, 20 25 — —
Collector–Emitter Breakdown Voltage V
(I C = 10 µAdc, I C = 0) BCX17, 19 50 — —

BCX18, 20 30 — —
Collector Cutoff Current I
(V CB = 20 Vdc, I E = 0) — — 100 nAdc
(V

= 20 Vdc, I E = 0, T A = 150°C ) — — 5.0 µAdc

CB

Emitter Cutoff Current
(V

= 5.0 Vdc, I C = 0)

EB

(BR)CEO

(BR)CES

CBO

I

EBO

——10µAdc

ON CHARACTERISTICS

DC Current Gain h
( IC= 100 mAdc, VCE = 1.0 Vdc ) 100 — 600
( IC= 300 mAdc, VCE = 1.0 Vdc ) 70 — —
( IC= 500 mAdc, VCE = 1.0 Vdc ) 40 — —

Collector–Emitter Saturation Voltage
( IC = 500mAdc, IB = 50mAdc )

V

FE

CE(sat)

— — 0.62 Vdc

Vdc

Vdc

—

Base–Emitter On Voltage
( IC = 500 mAdc, VCE = 1.0 Vdc )

V

BE(on)

— — 1.2 Vdc

M15–2/2