LRC BCW72LT1 Datasheet
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
MAXIMUM RATINGS
EMITTER
LESHAN RADIO COMPANY, LTD.
BCW72LT1
3
1
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
45 Vdc
50 Vdc
5.0 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
DEVICE MARKING
BCW72LT1 = K2
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
A
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0mAdc, V
EB
= 0 )
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, V
EB
= 0 )
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE= 0 )
Emitter–Base Breakdown Voltage
(I E= 10 µAdc, I C= 0)
Collector Cutoff Current I
(V CB= 20 Vdc, I E= 0)
(V CB= 20 Vdc, I E= 0, T A=100°C )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
45 — — Vdc
45 — — Vdc
50 — — Vdc
5.0 — — Vdc
— — 100 nAdc
——10µAdc
M14–1/6
LESHAN RADIO COMPANY, LTD.
BCW72LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
( I C= 2.0 mAdc, VCE = 5.0 Vdc )
Collector–Emitter Saturation Voltage V
( I C = 10 mAdc, IB = 0.5 mAdc ) — — 0.25
( I C = 50 mAdc, IB = 2.5 mAdc ) — 0.21 —
Base–Saturation Voltage
( I C = 50 mAdc, I B = 2.5 mAdc )
Base–Emitter On Voltage
(I C = 2.0 mAdc, V CE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mAdc, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
( VCB = 10 Vdc,I E= 0, f = 1.0 MHz)
Input Capacitance
(I E = 0, V CB = 10 Vdc, f = 1.0 MHz)
Noise Figure
( I
= 0.2 mAdc, V
C
= 5.0 Vdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz )
CE
= 25°C unless otherwise noted) (Continued)
A
V
V
h
CE(sat)
BE(on)
BE(on)
f
C
C
FE
T
obo
ibo
200 — 450 —
— 0.85 — Vdc
0.6 — 0.75 Vdc
— 300 — MHz
— — 4.0 pF
— 9.0 — pF
NF — — 10 dB
Vdc
300 ns
DUTY CYCLE = 2%
– 0.5 V
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
+10.9 V
10 k
<1.0 ns
Figure 1. Turn–On Time
10 < t
275
DUTY CYCLE = 2%
C S < 4.0 pF*
< 500 µs
1
0
– 9.1 V
t
1
+10.9 V
1N916
<1.0 ns
*T otal shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
+3.0 V
275
10 k
C S < 4.0 pF*
M14–2/6
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