LRC BCW69LT1, BCW70LT1 Datasheet
General Purpose Transistors
PNP Silicon
LESHAN RADIO COMPANY, LTD.
BCW69LT1
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
EBO
C
– 45 Vdc
– 5.0 Vdc
– 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
BCW70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2,
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) V
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V
= 0 ) V
EB
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V
Collector Cutoff Current I
(BR)CEO
(BR)CES
(BR)EBO
CEO
(VCE = –20 Vdc, I E = 0 ) — – 100 nAdc
(VCE = –20 Vdc, I E = 0 , TA = 100°C) — – 10 µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
– 45 — Vdc
– 50 — Vdc
– 5.0 — Vdc
M13–1/6
LESHAN RADIO COMPANY, LTD.
BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
( IC= –2.0 mAdc, VCE = –5.0 Vdc ) BCW69LT1 120 260
BCW70LT1 215 500
Collector–Emitter Saturation Voltage
( IC = – 10 mAdc, IB = –0.5 mAdc )
Base–Emitter On Voltage
( IC = – 2.0 mAdc, V CE = – 5.0Vdc )
V
V
FE
CE(sat)
BE(on)
— – 0.3 Vdc
– 0.6 – 0.75 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
( I E= 0 V CB = –10Vdc, f = 1.0 MHz)
Noise Figure
(V
= – 5.0 Vdc, I C = – 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
CE
C
obo
N
F
— 7.0 pF
—10dB
—
M13–2/6
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