LRC BCW68GLT1 Datasheet

General Purpose Transistors

PNP Silicon

3
COLLECTOR

LESHAN RADIO COMPANY, LTD.

BCW68GLT1

1
BASE

2
EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

– 45 Vdc
– 60 Vdc

– 5.0 Vdc

– 800 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T

P

D

225 mW

1.8 mW/°C

θJA

P

D

556 °C/W

300 mW

2.4 mW/°C

θJA

stg

417 °C/W

–55 to +150 °C

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

DEVICE MARKING

BCW68GLT1 = DH

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) V
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, V

= 0 ) V

EB

Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V
Collector Cutoff Current I

(BR)CEO

(BR)CES

(BR)EBO

CES

(VCE = –45 Vdc, I E= 0 ) — — – 20 nAdc
(VCE = –45 Vdc, I B= 0 , TA = 150°C) — — – 10 µAdc
Emitter Cutoff Current (V

= – 4.0 Vdc, I C = 0) I

EB

EBO

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

– 45 — — Vdc
– 60 — — Vdc

– 5.0 — — Vdc

— — – 20 nAdc

M12–1/2

LESHAN RADIO COMPANY, LTD.

BCW68GLT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain h
( IC= –10 mAdc, VCE = –1.0 Vdc ) 120 — 400
( IC= –100 mAdc, VCE = –1.0 Vdc ) 160 — —
( IC= –300 mAdc, VCE = –1.0 Vdc ) 60 — —
Collector–Emitter Saturation Voltage
( IC = – 300 mAdc, IB = –30 mAdc )
Base–Emitter Saturation Voltage
( IC = – 500 mAdc, IB = –50 mAdc )

V

V

FE

CE(sat)

BE(sat)

— — – 1.5 Vdc

— — – 2.0 Vdc

SMSMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
Output Capacitance
(V

= – 10 Vdc, I E = 0, f = 1.0 MHz)

CB

C

Input Capacitance
(V

= –0.5 Vdc, I C = 0, f = 1.0 MHz)

EB

Noise Figure
(V

= – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

CE

T

obo

C

ibo

NF — — 10 dB

100 — — MHz

— —18pF

— — 105 pF

—

M12–2/2