LRC BCW65ALT1 Datasheet

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

3
COLLECTOR

1
BASE

2

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

32 Vdc
60 Vdc

5.0 Vdc

800 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T

P

D

θJA

P

D

θJA

EMITTER

–55 to +150 °C

stg

225 mW

1.8 mW/°C

556 °C/W

300 mW

2.4 mW/°C

417 °C/W

BCW65ALT1

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

DEVICE MARKING

BCW65ALT1 = EA

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage
(IC = 10mAdc, I B= 0 )
Collector–Emitter Breakdown Voltage
(IC = 10 µAdc, V

EB

= 0 )
Emitter–Base Breakdown Voltage
(I E= 10 µAdc, I C = 0)
Collector Cutoff Current I
(VCE = 32 Vdc, IE = 0 ) — — 20 nAdc
(VCE = 32 Vdc, IE = 0 , TA = 150°C) — — 20 µAdc
Emitter Cutoff Current
(V EB= 4.0 Vdc, I C = 0)

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CES

EBO

32 — — Vdc

60 — — Vdc

5.0 — — Vdc

— — 20 nAdc

M11–1/2

LESHAN RADIO COMPANY, LTD.

BCW65AL T1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain h
( IC= 100 µAdc, VCE = 10 Vdc ) 35 — —
( IC= 10 mAdc, VCE = 1.0 Vdc ) 75 — 220
( IC= 100 mAdc, VCE = 1.0 Vdc ) 100 — 250
( IC= 500 mAdc, VCE = 2.0 Vdc ) 35 — —
Collector–Emitter Saturation Voltage V
( IC = 500 mAdc, IB = 50 mAdc ) — 0.7 —
( IC = 100 mAdc, IB = 10 mAdc ) — 0.3 —
Base–Emitter Saturation Voltage V
( IC = 500 mAdc, IB = 50 mAdc ) — — 2.0

FE

CE(sat)

BE(sat)

SMSMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product
(I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V

= 10 Vdc, I E = 0, f = 1.0 MHz)

CB

Input Capacitance
(V

= 0.5 Vdc, I C = 0, f = 1.0 MHz)

EB

Noise Figure
(V

= 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

CE

SWITCHING CHARACTERISTICS

Turn–On Time
(I B1= I B2= 15 mAdc)
Turn–Off T ime
(I C= 150 mAdc, R L = 150 Ω )

f

T

C

obo

C

ibo

100 — — MHz

— —12pF

— — 80 pF

NF — — 10 dB

t

on

t

off

— — 100 ns

— — 400 ns

—

Vdc

Vdc

M11–2/2