LRC BCW61CLT1, BCW61BLT1 Datasheet
General Purpose Transistors
PNP Silicon
LESHAN RADIO COMPANY, LTD.
BCW61BLT1
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
– 32 Vdc
– 32 Vdc
– 5.0 Vdc
– 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
BCW61CLT1
BCW61DLT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0 )
Emitter–Base Breakdown Voltage
(I E= –1.0 µAdc, I C = 0)
Collector Cutoff Current I
(VCE = –32 Vdc, ) — –20 nAdc
(VCE = –32 Vdc, TA = 150°C) — –20 µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)EBO
– 32 — Vdc
– 5.0 — Vdc
CES
M10–1/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
( IC= – 10 µAdc, VCE = – 5.0 Vdc ) BCW61B 30 —
BCW61C 40 —
BCW61D 100 —
( IC= – 2.0 mAdc, VCE = – 5.0 Vdc ) h
BCW61B 140 310
BCW61C 250 460
BCW61D 380 630
( IC= – 50 mAdc, VCE = – 1.0 Vdc ) h
BCW61B 80 —
BCW61C 100 —
BCW61D 100 —
AC Current Gain h
( VCE = – 5.0Vdc, IC= – 2.0 mAdc, BCW61B 175 350
f= 1.0 kHz ) BCW61C 250 500
BCW61D 350 700
Collector–Emitter Saturation Voltage V
( IC = – 50 mAdc, IB = – 1.25 mAdc ) — – 0.55
( IC = – 10 mAdc, IB = – 0.25 mAdc ) — – 0.25
Base–Emitter Saturation Voltage V
( IC = – 50 mAdc, IB = – 1.25 mAdc ) – 0.68 – 1.05
( IC = – 10 mAdc, IB = – 0.25 mAdc ) –0.6 – 0.85
Base–Emitter On Voltage V
( IC = – 2.0 mAdc, VCE = – 5.0 Vdc ) – 0.6 – 0.75
FE
FE
FE
FE
CE(sat)
BE(sat)
BE(on)
SMSMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
= – 10 Vdc, I C = 0, f = 1.0 MHz)
CE
Noise Figure
(V
= – 5.0 Vdc, I C = – 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
CE
SWITCHING CHARACTERISTICS
Turn–On Time
(I C = – 10 mAdc, I B1 = – 1.0 mAdc)
Turn–Off T ime
(I B2 =– 1.0 mAdc, V BB = – 3.6 Vdc, R 1 = R 2 = 5.0 kΩ, R L = 990 Ω)
C
obo
— 6.0 pF
NF — 6.0 dB
t
on
t
off
— 150 ns
— 800 ns
—
—
—
—
Vdc
Vdc
Vdc
M10–2/6
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