LRC BCW60DLT1, BCW60BLT1, BCW60ALT1 Datasheet
General Purpose Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
32 Vdc
32 Vdc
5.0 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
BCW60ALT1
BCW60BLT1
BCW60DLT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0mAdc, IE = 0 )
Emitter–Base Breakdown Voltage
(I E= 1.0 µAdc, I C = 0)
Collector Cutoff Current I
(VCE = 32 Vdc, ) — 20 nAdc
(VCE = 32 Vdc, TA = 150°C) — 20 µAdc
Emitter Cutoff Current
(I EB= 4.0 Vdc, I C = 0)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)EBO
CES
I
EBO
32 — Vdc
5.0 — Vdc
— 20 nAdc
M9–1/6
LESHAN RADIO COMPANY, LTD.
BCW60ALT1 BCW60BLT1 BCW60DLT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
( IC= 10 µAdc, VCE = 5.0 Vdc ) BCW60A 20 —
BCW60B 30 —
BCW60D 100 —
( IC= 2.0 mAdc, VCE = 5.0 Vdc ) h
BCW60A 120 220
BCW60B 175 310
BCW60D 380 630
( IC= 50 mAdc, VCE = 1.0 Vdc ) h
BCW60A 60 —
BCW60B 70 —
BCW60D 100 —
AC Current Gain h
( VCE = 5.0Vdc, IC= 2.0 mAdc, BCW60A 125 250
f= 1.0 kHz ) BCW60B 175 350
BCW60D 350 700
Collector–Emitter Saturation Voltage V
( IC = 50 mAdc, IB = 1.25 mAdc ) — 0.55
( IC = 10 mAdc, IB = 0.25 mAdc ) — 0.35
Base–Emitter Saturation Voltage V
( IC = 50 mAdc, IB = 1.25 mAdc ) 0.7 1.05
( IC = 50 mAdc, IB = 0.25 mAdc ) 0.6 0.85
Base–Emitter On Voltage V
( IC = 2.0 mAdc, VCE = 5.0 Vdc ) 0.6 0.75
FE
FE
FE
FE
CE(sat)
BE(sat)
BE(on)
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mAdc, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
= 10 Vdc, I C = 0, f = 1.0 MHz)
CE
Noise Figure
(V
= 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
CE
SWITCHING CHARACTERISTICS
Turn–On Time
(I C = 10 mAdc, I B1 = 1.0 mAdc)
Turn–Off T ime
(I B2 = 1.0 mAdc, V BB = 3.6 Vdc, R 1 = R 2 = 5.0 kΩ, R L = 990 Ω)
f
T
C
obo
125 — MHz
— 4.5 pF
NF — 6.0 dB
t
on
t
off
— 150 ns
— 800 ns
—
—
—
—
Vdc
Vdc
Vdc
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
+10.9 V
10 k
Figure 1. Turn–On Time
< 500 µs
DUTY CYCLE = 2%
275
C S < 4.0 pF*
10 < t
1
0
– 9.1 V
t
1
+10.9 V
1N916
<1.0 ns
*T otal shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
+3.0 V
275
10 k
C S < 4.0 pF*
M9–2/6
Loading...