LRC BCW33LT1 Datasheet
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
20 Vdc
30 Vdc
5.0 Vdc
100 mAdc
P
D
θJA
P
D
θJA
–55 to +150 °C
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
BCW33LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E= 10 µAdc, I C = 0)
Collector Cutoff Current I
(VCB = 32 Vdc, IE = 0 ) — 100 nAdc
(VCB = 32 Vdc, IE = 0, TA = 100°C) — 10 µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
32 — Vdc
32 — Vdc
5.0 — Vdc
CBO
M8–1/6
LESHAN RADIO COMPANY, LTD.
BCW33LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
( IC= 2.0 mAdc, VCE = 5.0 Vdc )
Collector–Emitter Saturation Voltage
( IC = 10 mAdc, IB = 0.5 mAdc )
Base–Emitter On Voltage
( IC = 2.0 mAdc, VCE = 5.0 Vdc )
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
( VCB = 10 Vdc,IE= 0, f = 1.0 MHz)
Noise Figure
( I
= 0.2 mAdc, V
C
= 5.0 Vdc, R S = 2. 0 kΩ, f = 1.0 kHz, BW = 200 Hz )
CE
EQUIVALENT SWITCHING TIME TEST CIRCUITS
= 25°C unless otherwise noted) (Continued)
A
V
V
h
CE(sat)
BE(on)
C
FE
obo
420 800 —
— 0.25 Vdc
0.55 0.70 Vdc
— 4.0 pF
NF — 10 dB
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+3.0 V
+10.9 V
10 k
Figure 1. Turn–On Time
< 500 µs
275
DUTY CYCLE = 2%
C S < 4.0 pF*
10 < t
1
0
– 9.1 V
t
1
+10.9 V
1N916
<1.0 ns
*T otal shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
+3.0 V
275
10 k
C S < 4.0 pF*
M8–2/6
Loading...