LRC BCW30LT1, BCW29LT1 Datasheet
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
PNP Silicon
3
COLLECTOR
2
BASE
1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
–32 Vdc
–32 Vdc
–5.0 Vdc
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
θJA
P
D
θJA
EMITTER
–55 to +150 °C
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
BCW29LT1
BCW30LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0mAdc, IE = 0 )
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V EB = 0)
Collector–Emitter Breakdown Voltage
(I C = –10 µAdc, I C = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current I
(VCB = –32 Vdc, IE = 0 ) — –100 nAdc
(VCB = –32 Vdc, IE = 0, TA = 100°C) — –10 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
V
(BR)CBO
V
(BR)EBO
(BR)CES
CBO
–32 — Vdc
–32 — Vdc
–32 — Vdc
–5.0 — Vdc
M7–1/6
LESHAN RADIO COMPANY, LTD.
BCW29LT1 BCW30LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol M in Max Unit
ON CHARACTERISTICS
DC Current Gain h
( IC= – 2.0 mAdc, VCE = – 5.0 Vdc ) BCW29 120 260 —
BCW30 215 500 —
Collector–Emitter Saturation Voltage
( IC = – 10 mAdc, IB = – 0.5 mAdc )
Base–Emitter On Voltage
( IC = – 2.0 mAdc, VCE = – 5.0 Vdc )
V
V
FE
CE(sat)
BE(on)
— – 0.3 Vdc
– 0.6 –0.75 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
( VCB = – 10 Vdc,IE= 0, f = 1.0 MHz)
Noise Figure
( I
= – 0.2 mAdc, V
C
= –5.0 Vdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz )
CE
C
obo
— 7.0 pF
NF — 10 d B
M7–2/6
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