LRC BC858CWT1, BC857BWT1, BC858AWT1, BC858BWT1, BC857AWT1 Datasheet
...
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
–65 –45 –30 V
–80 –50 –30 V
–5.0 –5.0 –5.0 V
–100 –100 –100 mAdc
1
BASE
LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1
3
COLLECTOR
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
2
EMITTER
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
P
D
θJA
stg
150 mW
833 °C/W
–55 to +150 °C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA) BC857 Series V
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0) BC857 Series V
Collector–Base Breakdown Voltage BC856 Series – 80 — —
(IC = – 10 µA) BC857 Series V
Emitter–Base Breakdown Voltage BC856 Series – 5.0 — —
(IE = – 1.0 µA) BC857 Series, V
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V , TA = 150°C) — — – 4.0 µA
BC856 Series – 65 — —
(BR)CEO
– 45 — — v
BC858 Series – 30 — —
BC856 Series – 80 — —
(BR)CES
– 50 — — v
BC858 Series – 30 — —
(BR)CBO
– 50 — — v
BC858 Series – 30 — —
(BR)EBO
– 5.0 — — v
BC858 Series – 5.0 — —
I
CBO
— — – 15 nA
1.FR–5=1.0 x 0.75 x 0.062in
K5–1/5
LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1, CWT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min T y p Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V) BC856B, BC857B, BC858B
(I C = –2.0 mA, V CE = –5.0 V) BC856A, BC857A, BC858A
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — – 0.9 —
Base–Emitter Voltage (I C = –2.0 mA, V
Base–Emitter Voltage (I
BC856A, BC857A, BC858A
BC858C,
BC856B, BC857B, BC858B
BC858C
= –5.0 V)
CE
= –10 mA, V
C
= –5.0 V) — — – 0.82
CE
h
FE
—90——
— 150 —
— 270 —
125 180 250
220 290 475
420 520 800
V
V
V
CE(sat)
BE(sat)
BE(on)
= – 5.0 mA) — — – 0.65
B
— — – 0.3
— – 0.7 —
– 0.6 — – 0.75
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V
= – 5.0 Vdc, f = 100 MHz)
CE
Output Capacitance (V CB = – 10 V, f = 1.0 MHz) C
Noise Figure
(I C= – 0.2 mA,V
= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
CE
f
T
ob
100 — — MHz
— — 4.5 pF
NF –– –– 10 dB
V
V
V
K5–2/5
Loading...