LRC BC857BRLT1 Datasheet
General Purpose Transistors
PNP Silicon
3
COLLECTOR
LESHAN RADIO COMPANY, LTD.
BC857BRLT1
is LRC prefered Device
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Collector power dissipation P
Junction temperature T
Storage temperature T
CEO
CBO
EBO
C
C
j
stg
–50 V
–60 V
–6.0 V
–150 mAdc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
BC857BRLT1
ELECTRICAL CHARACTERISTICS (T
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio h
(V
CE
Transition frequency
(V
CE
Output capacitance
(V
CB
=G3F
Characteristic Symbol Min Typ Max Unit
= – 6 V, I C= –1mA)
= – 12 V, I E= 2mA, f=30MHz )
= – 12 V, I E= 0A, f =1MHz )
= 25°C unless otherwise noted.)
A
2
EMITTER
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
FE
f
T
C
ob
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
– 50 — — V
– 6 — — V
– 60 — — V
— — – 0.1 µA
— — – 0.1 µA
— — -0.5 V
120 –– 560 ––
— 140 –– MHz
— 4.0 5.0 pF
h
values are classified as follows:
FE
*
hFE 120~270 180~390 270~560
QRS
M35–1/3
LESHAN RADIO COMPANY, LTD.
BC857BRLT1
Fig.1 Grounded emitter propagation characteristics
–50
T A = 100°C
25°C
– 40°C
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
V
BASE TO EMITTER VOL TAGE(V)
BE ,
(mA)
–0.5
, COLLECTOR CURRENT
C
–0.2
I
–0.1
–20
–10
–50
–2
–1
VCE= –10 V
Fig.3 Grounded emitter output characteristics( )
–100
T A = 25°C
(mA)
, COLLECTOR CURRENT
C
I
–80
–60
–40
–20
500
450
400
350
300
–250
–200
–150
–100
–50 µA
=0
I
0
0 –1–2 –3 –4–5
V
COLLECTOR TO EMITTER VOLTAGE (V)
CE ,
B
Fig.2 Grounded emitter output characteristics( )
–10
T A = 25°C
(mA)
–8
–6
–4
–2
, COLLECTOR CURRENT
C
I
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
V
COLLECTOR TO EMITTER VOLTAGE (V)
CE ,
–35.0
–31.5
–28.0
–24.5
–21.0
–17.5
–14.0
–10.5
–7.0
–3.5µA
I
B
Fig.4 DC current gain vs. collector current ( )
500
T A = 25°C
200
100
, DC CURRENT GAIN
FE
h
50
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
I C, COLLECTOR CURRENT (mA)
VCE= –5 V
–3V
–1V
=0
Fig.5 DC current gain vs. collector current ( )
500
200
100
, DC CURRENT GAIN
FE
h
50
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
T A = 100°C
25°C
–40°C
, COLLECTOR CURRENT (mA)
I
C
VCE= – 6V
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
–1
–0.5
–0.2
I
/I B = 50
C
–0.1
20
10
–0.05
, COLLECTOR SATURATION VOLTAGE(V)
CE(sat)
V
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
I C, COLLECTOR CURRENT (mA)
T A = 25°C
M35–2/3
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