LRC BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC856BDW1T1 Datasheet
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
Q
2
1
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current -Continuous I
5
2
4
Q
1
3
CEO
CBO
EBO
C
See Table
–65 –45 –30 V
–80 –50 –30 V
–5.0 –5.0 –5.0 V
–100 –100 –100 mAdc
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
6
5
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
4
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation P
Per Device 250 mW
FR– 5 Board, (1) TA = 25°C
Derate above 25°C 3.0 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
1. FR–5 = 1.0 x 0.75 x 0.062 in.
D
θJA
stg
380 mW
328 °C/W
–55 to +150 °C
ORDERING INFORMATION
Device Package Shipping
BC856BDW1T1 SOT–363 3000 Units/ Reel
BC857BDW1T1 SOT–363 3000 Units/ Reel
BC857CDW1T1 SOT–363 3000 U nits/R eel
BC858BDW1T1 SOT–363 3000 Units/ Reel
BC858CDW1T1 SOT–363 3000 U nits/R eel
BC856b–1/5
LESHAN RADIO COMPANY, LTD.
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol M in Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V
(I C = –10 mA) BC856 Series –65 — —
BC857 Series –45 — —
BC858 Series –30 — —
Collector–Emitter Breakdown Voltage V
(I C = –10 µA, V
= 0) BC856 Series –80 — —
EB
BC857 Series –50 — —
BC858 Series –30 — —
Collector–Base Breakdown Voltage V
(I C = –10 µA) BC856 Series –80 — —
BC857 Series –50 — —
BC858 Series –30 — —
Emitter–Base Breakdown Voltage V
(I E = –1.0 µA) BC856 Series –5.0 — —
BC857 Series –5.0 — —
BC858 Series –5.0 — —
Collector Cutoff Current (V
= –30 V) I
CB
(V
= –30 V, T A = 150°C) — — –4.0 µA
CB
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
— — –15 nA
ON CHARACTERISTICS
DC Current Gain h
(I C = –10 µA, V
= –5.0 V) BC856B, BC857B, BC858B — 150 —
CE
BC857C, BC858C — 270 —
FE
V
V
V
V
—
(I C = –2.0 mA, V
=– 5.0 V) BC856B, BC857B, BC858B 220 290 475
CE
BC857C, BC858C 420 520 800
Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V
CE(sat)
— — –0.3 V
Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA) — — –0.65
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V
BE(sat)
— –0.7 — V
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — –0.9 —
Base–Emitter Voltage (I C = –2.0 mA, V
Base–Emitter Voltage (I C = –10 mA, V
= –5.0 V) V
CE
= –5.0 V) — — –0.82
CE
BE(on)
–0.6 –– –0.75 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(I C = –10 mA, V
Output Capacitance (V
= –5.0 Vdc, f = 100 MHz)
CE
= –10 V, f = 1.0 MHz) C
CB
T
obo
Noise Figure (I C = –0.2 mA, NF dB
V
= –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10
CE
100 — — MHz
— — 4.5 pF
BC856b–2/5
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