General Purpose Transistors
LESHAN RADIO COMPA NY, LTD.
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Collector Current(Peak value) I
Emitter Current(Peak value) I
Base Current(Peak value) I
Symbol BC846 BC850 BC849 Unit
CEO
CBO
EBO
C
CM
EM
BM
65 45 30 V
80 50 30 V
6.0 6.0 5.0 V
100 100 100 mAdc
200 200 200 mAdc
200 200 200 mAdc
200 200 200 mAdc
SOLDERING CHARACTERISTICS
Characteristic Symbol Unit
Solder Heat Resistance 265 °C
Solderability 240 to 265 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θθ
θJA
θθ
D
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ , T
θθ
θJA
θθ
stg
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
BC847 BC848
556 °C/W
417 °C/W
–55 to +150 °C
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA) BC847A,B,C, BC850B,C V
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C V
Collector–Base Breakdown Voltage BC846A,B 80 — —
(IC = 10 µA) BC847A,B,C, BC850B,C V
Emitter–Base Breakdown Voltage BC846A,B BC847A,B,C 6.0
(IE = 1.0 µA) BC848A,B,C, BC849B,C, V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC846A,B 65 — —
(BR)CEO
45 — — v
BC848A,B,C, BC849B,C 30 — —
BC846A,B 80 — —
(BR)CES
50 — — v
BC848A,B,C, BC849B,C 30 — —
(BR)CBO
50 — — v
BC848A,B,C, BC849B,C 30 — —
(BR)EBO
5.0
BC850B,C 5.0
I
CBO
——15nA
M3–1/4
LESHAN RADIO COMPA NY, LTD.
BC846AL T1,BL T1 BC847AL T1,BLT1 CL T1 thru BC850BL T1,CLT1
ELECTRICAL CHARACTERISTICS(T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Ty p Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V) BC846B, BC847B, BC848B
(I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — 0.9 —
Base–Emitter Voltage (I C = 2.0 mA, V
Base–Emitter Voltage (I
BC846A, BC847A, BC848A
BC847C, BC848C
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
= 5.0 mA) — — 0.6
B
= 5.0 V)
CE
= 10 mA, V
C
= 5.0 V) — — 770
CE
V
V
V
h
CE(sat)
BE(sat)
BE(on)
FE
—90——
— 150 —
— 270 —
110 180 220
200 290 450
420 520 800
— — 0.25
— 0.7 —
580 660 700
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V
= 5.0 Vdc, f = 100 MHz)
CE
Output Capacitance (V CB = 10 V, f = 1.0 MHz) C
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A NF dB
V
= 5.0 Vdc, R S = 2.0 kΩ,BC846B, BC847B, BC848B
CE
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 10
BC849B,C, BC850B,C — — 4.0
f
T
obo
100 — — MHz
— — 4.5 pF
V
V
mV
2.0
V
= 10 V
1.5
1.0
0.8
0.6
0.4
0.3
, NORMALIZED DC CURRENT GAIN
FE
h
0.2
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
CE
T
A
= 25°C
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
2.0
= 25°C
T
A
1.6
I C= 200 mA
1.2
0.8
0.4
, COLLECTOR– EMITTER VOLTAGE (V)
CE
V
I C =
I
=
I
= 50 mA
C
10 mA
0
0.02 0.1 1.0 10 20
C
20 mA
I
= 100 mA
C
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1.0
T A = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V, VOLTAGE (VOLTS)
0.2
0.1
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
V
@ I
V
C /I B
CE(sat)
=10
@ V
V
BE(on)
@ I C /I B = 10
= 10 V
CE
BE(sat)
, COLLECTOR CURRENT (mAdc)
I
C
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
, TEMPERA TURE COEFFICIENT (mV/ °C)
VB
θθ
θθ
θ
3.0
0.2 1.0 10 100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
M3–2/4
LESHAN RADIO COMPA NY, LTD.
BC846AL T1,BL T1 BC847AL T1,BL T1 CLT1 thru BC850BL T1,CLT1
BC847/BC848
10.0
7.0
5.0
C
ib
T A = 25°C
3.0
C
ob
2.0
C, CAPACITANCE(pF)
1.0
0.4 0.6 0.81.0 2.0 4.0 6.0 8.0 10 20 40
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
V
= 5V
CE
T A = 25°C
2.0
1.0
400
300
200
V
100
80
CE
T A = 25°C
60
40
30
20
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz)
T
f
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
T A = 25°C
0.8
0.6
V
@ I C /I B = 10
BE(sat)
VBE @ VCE = 5.0 V
= 10V
0.5
0.2
, DC CURRENT GAIN (NORMALIZED)
FE
h
0.1 0.2 1.0 10 100
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
2.0
1.6
20mA
50mA
1.2
I C =
0.8
10 mA
0.4
, COLLECTOR– EMITTER VOL TAGE (VOLTS)
0
CE
V
I
, BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
100mA
T A= 25°C
200mA
0.4
0.2
V
@ I C /I B= 10
V, VOLTAGE (VOLTS)
0
CE(sat)
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–1.0
–1.4
–1.8
θ
for V
VB
BE
–55°C to 125°C
–2.2
–2.6
, TEMPERATURE COEFFICIENT (mV/°C)
VB
θθ
θθ
θ
–3.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 2000.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I
, COLLECTOR CURRENT (mA)
C
Figure 10. Base–Emitter Temperature Coefficient
M3–3/4
40
20
10
LESHAN RADIO COMPA NY, LTD.
BC846AL T1, BLT1 BC847AL T1, BLT1 CL T1 thru BC850BLT1, CL T1
BC846
T A= 25°C
C
ib
500
200
100
V CE= 5 V
T A= 25°C
6.0
C, CAPACITANCE (pF)
4.0
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
V R , REVERSE VOLTAGE (VOLTS)
C
ob
Figure 11. Capacitance
50
20
, CURRENT– GAIN – BANDWIDTH PRODUCT T
T
f
1.0 5.0 10 50 100
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
M3–4/4
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