LRC BC848CWT1, BC848BWT1, BC847BWT1, BC848AWT1, BC846AWT1 Datasheet
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General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
65 45 30 V
80 50 30 V
6.0 6.0 5.0 V
100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Junction and Storage T emperature T J , T
P
D
θJA
D
–55 to +150 °C
stg
3
COLLECTOR
2
EMITTER
150 mW
833 °C/W
2.4 mW/°C
BC846A WT1,BWT1
BC847A WT1,BWT1
CWT1
BC848A WT1,BWT1
CWT1
3
1
2
CASE 419–02, STYLE 3
SOT–323 /SC–70
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA) BC847 Series V
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0) BC847 Series V
Collector–Base Breakdown Voltage BC846 Series 80 — —
(IC = 10 µA) BC847 Series V
Emitter–Base Breakdown Voltage BC846 Series 6.0 — —
(IE = 1.0 µA) BC847 Series, V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V , TA = 150°C) — — 5.0 µA
1.FR–5=1.0 x 0.75 x 0.062in
BC846 Series 65 — —
(BR)CEO
BC848 Series 30 — —
BC846 Series 80 — —
(BR)CES
BC848 Series 30 — —
(BR)CBO
BC848 Series 30 — —
(BR)EBO
BC848 Series 5.0 — —
I
CBO
45 — — v
50 — — v
50 — — v
6.0 — — v
——15nA
K4–1/4
LESHAN RADIO COMPANY, LTD.
BC846AWT1,BWT1 BC847A WT1,BWT1 CWT1 BC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS(T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V) BC846B, BC847B, BC848B
(I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — 0.9 —
Base–Emitter Voltage (I C = 2.0 mA, V
Base–Emitter Voltage (I
BC846A, BC847A, BC848A
BC847C, BC848C
BC846B, BC847B, BC848B
BC847C, BC848C
= 5.0 V)
CE
= 10 mA, V
C
= 5.0 V) — — 770
CE
h
FE
—90——
— 150 —
— 270 —
110 180 220
200 290 450
420 520 800
V
V
V
CE(sat)
BE(sat)
BE(on)
= 5.0 mA) — — 0.6
B
— — 0.25
— 0.7 —
580 660 700
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V
= 5.0 Vdc, f = 100 MHz)
CE
Output Capacitance (V CB = 10 V, f = 1.0 MHz) C
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A NF dB
V
= 5.0 Vdc, R S = 2.0 kΩ, BC846B, BC847B, BC848B — — 10
CE
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 4.0
f
T
obo
100 — — MHz
— — 4.5 pF
V
V
mV
2.0
V
1.5
1.0
0.8
0.6
0.4
0.3
, NORMALIZED DC CURRENT GAIN
FE
h
0.2
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
CE
T
A
= 10 V
= 25°C
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
2.0
T
= 25°C
A
1.6
I C= 200 mA
1.2
0.8
0.4
, COLLECTOR– EMITTER VOLTAGE (V)
CE
V
I C =
I
=
I
= 50 mA
C
20 mA
C
10 mA
0
0.02 0.1 1.0 10 20
I
= 100 mA
C
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1.0
T A = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V, VOLTAGE (VOLTS)
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
V
@ I
V
C /I B
CE(sat)
=10
V
@ V
BE(on)
@ I C /I B = 10
= 10 V
CE
BE(sat)
, COLLECTOR CURRENT (mAdc)
I
C
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
, TEMPERATURE COEFFICIENT (mV/ °C)
VB
θθ
θθ
θ
0.2 1.0 10 100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
K4–2/4
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