LRC BC817-40LT1, BC817-25LT1, BC817-16LT1 Datasheet
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
45 V
50 V
5.0 V
500 mAdc
D
θJA
D
θJA
–55 to +150 °C
stg
556 °C/W
417 °C/W
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(I E = –1.0 µA)
Collector Cutoff Current I
(VCB = 20 V) — — 100 nA
(V
= 20 V, TA = 150°C) — — 5.0 µA
CB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
45 — — V
50 — — V
5.0 — — V
CBO
M2–1/2
LESHAN RADIO COMPANY, LTD.
BC817-16LT1 BC817-25LT1 BC817-40LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C= 100 mA, V CE = 1.0 V) BC817–16 100 — 250
BC817–25 160 — 400
BC817–40 250 — 600
(I C = 500 mA, V CE = 1.0 V) 40 — —
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V
= 1.0 V)
CE
V
V
FE
CE(sat)
BE(on)
— — 0.7 V
— — 1.2 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
f
T
C
obo
100 — — MHz
—10 —pF
—
M2–2/2
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