LRC BB535 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
1
CATHODE
MAXIMUM RATINGS
Parameter Symbol Value Unit
Diode Reverse Voltage V
Peak reverse voltage ( R > 5kΩ)V RM35 V
Forward Current I
Operating temperature range T
Storage temperature T
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction - ambient R
2
ANODE
R
F
op
stg
thJA
- 55 ~ + 125 °C
- 55 ... + 150 °C
<
BB 535
1
2
CASE 477– 02, STYLE 1
SOD– 323
30 V
20 mA
450 K/W
DC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse current I
R
V R = 30 V, T A = 25 °C – – 10
V R = 30 V, T A = 85 °C – – 200
AC CHARACTERISTICS
Diode capacitance C
V R = 1 V, f = 1 MHz 17.5 18.7 20
V R = 2 V, f = 1 MHz 14.01 15 16.1
V R = 25 V, f = 1 MHz 2.05 2.24 2.4
V R = 28 V, f = 1 MHz 1.9 2 .1 2.3
Capacitance ratio C
V R = 2 V, V R = 25 V, f = 1 MHz 6 6.7 7.5
Capacitance ratio C
V R = 1 V, V R = 28 V, f = 1 MHz 8.2 8.9 9.8
Capacitance matching ∆ C T / C
V R = 1 ... 28 V, f = 1 MHz – – 2.5
Series resistance r
V R = 3 V, f = 470 MHz – 0.55 0.65
Series inductance L s – 2 – nH
T
/ C
T2
T25
/ C
T1
T28
T
s
nA
pF
–
–
%
Ω
S6–1/3
LESHAN RADIO COMPANY, LTD.
BB 535
Diode capacitance
C T = f ( V R ) f = 1MHz
20
18
16
14
12
( pF )
T
10
C
8
6
4
2
0
0 5 10 15 20 25 30
V R ( V )
Normalized diode capacitance
C (T A) / C (25°C) = f ( T A ), f = 1MHz, V
= Parameter
R
Temperature coefficient of the diodecapacitance
T
= f ( V R ) f = 1MHz
-1
10
-2
10
-3
10
( 1/°C )
Cc
Cc
T
-4
10
-5
10
0
10
1
10
V R ( V )
Reverse current
I R = f ( T A ), V R = 28V
2
10
1.06
1.04
25
1.02
/ C
TA
C
1.00
0.98
0.96
-30 -10 10 30 50 70 90 110
T A ( °C )
1V
2V
25V
3
10
2
10
( pA )
R
I
1
10
0
10
-10 10 30 50 70 90 100
T A ( °C )
S6–2/3
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