VHF variable capacitance diode
LESHAN RADIO COMPANY, LTD.
FEATURES
· Excellent linearity
· Ultra small plastic SMD package
· C28: 1 pF; ratio: 14.
APPLICATIONS
· Electronic tuning in satellite tuners
· Tuneable coupling
· Voltage controlled oscillators (VCO).
DESCRIPTION
The BB181 is a variable capacitance diode, fabricated in planar technology and
encapsulated in the SOD523 (SC-79) ultra small plastic SMD package.
1
CATHODE
2
ANODE
2
MARKING CODE:N
1
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
ELECTRICAL CHARACTERISTICS T
continuous reverse voltage – 30 V
continuous forward current – 2 0 mA
storage temperature – 55 +150 °C
operating junction temperature – 55 +150 °C
=25°C unless otherwise specified.
j
BB 181
SOD523 SC-79
N
1
2
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
C
C
I
R
r
C
d(0.5V)
d(28V )
s
d
reverse current V R = 30 V; see Fig.2 – 10 n A
=30 V; Tj =85°C; see Fig.2 – 200 nA
V
R
diode series resistance f = 470 MHz; note 1 – 3 Ω
diode capacitance V R = 0.5 V; f = 1 MHz; see Figs 1 and 3 8 17 pF
V
= 28 V; f = 1 MHz; see Figs 1 and 3 0.7 1.055 pF
R
capacitance ratio f = 1 M H z 12 16
Note
1. V
is the value at which Cd = 9 pF.
R
BB181–1/2
15
10
( pF )
d
C
LESHAN RADIO COMPANY, LTD.
BB 181
5
0
–1
10
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
3
10
(nA)
R
2
I
10
10
0 50 100
T j ( °C )
Fig.2 Reverse current as a function of junction
temperature; maximum values.
f = 1 MHz; T j =25°C
1 10 10
V R ( V )
–3
10
–4
10
)
-1
( K
d
TC
–5
10
–1
10
1 10 10
V R ( V )
Fig.3 Temperature coefficient of diode capacitance as a function of
reverse voltage; typical values.
2
T j = 0 to 85 °C.
2
BB181–2/2