LRC BAW56LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
BA W56LT1
1
3
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P
T A = 25 °C
erate above 25 °C 1.8 mW /°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,
(2)
T A = 25 °C
Derate above 25 °C 2.4 mW /°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
DEVICE MARKING
BAW56LT1 = A1
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise noted) (EACH DIODE)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V
(I
= 100 µAdc)
(BR)
Reverse Voltage Leakage Current I
(V R = 25 Vdc, T J = 150 °C) – 30
(V R = 70 Vdc) – 2.5
(V
= 70 Vdc, T
R
Diode Capacitance C
(V R = 0, f = 1.0 MHz)
Forward Voltage V
(I F = 1.0 mAdc) – 715
(I F = 10 mAdc) – 855
(I F = 50 mAdc) – 1000
(I F = 150 mAdc) – 1250
Reverse Recovery Time t
(I F = I R = 10 mAdc, I
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 150 °C) – 50
J
= 1.0 mAdc) (Figure 1) R L = 100Ω
R(REC)
CATHODE
2
CATHODE
R
F
FM(surge)
D
θJA
D
θJA
-55 to +150 °C
stg
70 Vdc
200 mAdc
500 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
(BR)
R
1
CASE 318–08, STYLE12
SOT– 23 (TO–236AB)
70 – Vdc
D
F
rr
– 2.0 pF
– 6.0 ns
3
2
µAdc
mVdc
G13–1/2
LESHAN RADIO COMPANY, LTD.
BB
AA
B
A
BB
AA
W56LW56L
W56L
W56LW56L
T1T1
T1
T1T1
+10 V
50 Ω OUTPUT
PULSE
GENERAT OR
100
10
820 Ω
2.0 k
t
100 µH
0.1 µF
t
INPUT SIGNAL
V
R
r
10%
90%
I
F
0.1µF
D U T
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CA THODE
10
T A = 85°C
T A = – 40°C
1.0
0.1
I
F
I
R
T A = 150°C
T A = 125°C
T A = 85°C
t
rr
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i
R(REC)
i
= 1.0 mA
R(REC)
= 1.0 mA)
t
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T A = 25°C
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.75
1.5
1.25
1.0
,DIODE CAPACIT ANCE (pF)
D
C
0.75
02 4 6 8
0.01
, REVERSE CURRENT (µA)
R
I
0.001
01020304050
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
T A = 55°C
T A = 25°C
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
G13–2/2
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