LRC BAV99RWT1, BAV99WT1 Datasheet
Dual Serise
LESHAN RADIO COMPANY, LTD.
Switching Diodes
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
ORDERING INFORMATION
Device Package Shipping
BAV99WT1 SOT–323(SC–70) 3000/Tape & Reel
BAV99RWT1 SOT–323(SC–70) 3000/Tape & Reel
Preferred: devices are recommended choices for future use and best overall value.
DEVICE MARKING
BAV99WT1
BAV99RWT1
3
1
2
BA V99WT1
CASE 419–02, STYLE 9
SOT–323 (SC–70)
BAV99RWT1
CASE 419–02, STYLE 10
SOT–323 (SC–70)
ANODE
1
CATHODE/ANODE
BA V99WT1
CATHODE
1
CATHODE/ANODE
BAV99RWT1
CATHODE
3
3
2
ANODE
2
BAV99WT1 = A7; BAV99RWT1 = F7
MAXIMUM RA TINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltag V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward I
Current (Note 1.)
(averaged over any 20 ms period)
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current I
t = 1.0 µs 2.0
t = 1.0 ms 1.0
t = 1.0 S 0.5
1. FR–5 = 1.0 × 0.75 × 0.062 in.
R
F
FM(surge)
RRM
F(AV)
FRM
FSM
70 Vdc
215 mAdc
500 mAdc
70 V
715 mA
450 mA
A
BAV99WT1 BAV99RWT1–1/3
LESHAN RADIO COMPANY, LTD.
BAV99WT1 BAV99RWT1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation P
D
FR–5 Board, (Note 1.) TA = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (Note 2.) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction to Ambient R
Junction and Storage Temperature TJ,T
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Each Diode)
A
θJA
stg
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown V oltage (I
Reverse V oltage Leakage Current (VR = 70 Vdc) I
Diode Capacitance C
(VR = 0, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc) V
= 100 µA) V
(BR)
(BR)
R
(VR = 25 Vdc, TJ = 150°C) –– 30
(VR = 70 Vdc, TJ = 150°C) –– 50
D
F
(IF = 10 mAdc) –– 855
(IF = 50 mAdc) –– 1000
(IF = 150 mAdc) –– 1250
200 mW
625 °C/W
300 mW
417 °C/W
–65 to +150 °C
70 –– Vdc
–– 2.5 µAdc
–– 1.5 pF
–– 715 mVdc
Reverse Recovery Time RL = 100 Ω t
(IF=IR=10 mAdc, i
=1.0mAdc) (Figure 1)
R(REC)
Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) V
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
+10 V
50 Ω OUTPUT
GENERATOR
820 Ω
PULSE
2.0 k
100 µH
0.1 µF
I
F
D.U.T.
0.1µF
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
INPUT SIGNAL
V
R
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
rr
FR
t
p
r
10%
90%
–– 6.0 ns
–– 1.75 V
I
t
F
I
R
(I F = I R = 10 mA; MEASURED
t
rr
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
t
= 1.0 mA
BAV99WT1 BAV99RWT1–2/3
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