LRC BAV99LT1 Datasheet
Dual Series Switching Diode
LESHAN RADIO COMPANY, LTD.
BAV99LT1
1
ANODE
3
CAHODE/ANODE
2
CATHODE
DEVICE MARKING
BAV99LT1 = A7
MAXIMUM RA TINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
Repetitive Peak Reverse Voltage V
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current I
R
F
RRM
F(AV)
FRM
FSM
70 Vdc
215 mAdc
500 mAdc
70 V
715 mA
450 mA
t = 1.0 µ s 2.0
t = 1.0 ms 1.0
t = 1.0 S 0.5
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation P
D
225 mW
FR–5 Board, (1) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage T emperature T J , T
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (EACH DIODE)
A
θJA
D
θJA
stg
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–65 to +150 °C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
Reverse Voltage Leakage Current (V R = 70 Vdc) I
(V R = 25 Vdc, T J = 150°C) –– 30
(V R = 70 Vdc, T J = 150°C) –– 50
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage (I F = 1.0 mAdc) V
(I F = 10 mAdc) — 855
(I F = 50 mAdc) –– 1000
(I F = 150 mAdc) –– 1250
Reverse Recovery Time
(I F = I R = 10 mAdc, i
= 1.0 mAdc, R L = 100Ω ) (Figure 1)
R(REC)
Forward Recovery Voltage
(I F = 10 mA, t r = 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 100 µA) V
(BR)
(BR)
R
C
D
F
t
rr
V
FR
70 — Vdc
— 2.5 µAdc
— 1.5 pF
–– 715 mVdc
— 6.0 ns
— 1.75 V
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
A
G7–1/2
LESHAN RADIO COMPANY, LTD.
BAV99LT1
+10 V
50 Ω OUTPUT
PULSE
GENERAT OR
100
10
820 Ω
2.0 k
t
100 µH
0.1 µF
I
F
D.U.T.
0.1µF
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
INPUT SIGNAL
V
R
10%
90%
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH DIODE
10
T A = 85°C
T A = – 40°C
1.0
0.1
I
F
I
R
T A = 150°C
T A = 125°C
T A = 85°C
t
rr
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i
R(REC)
i
= 1.0 mA
R(REC)
= 1.0 mA)
t
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T A = 25°C
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
,TOTAL CAPACITANCE (pF)
D
C
0.52
02 4 6 8
0.01
, REVERSE CURRENT (µA)
R
I
0.001
01020304050
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
T A = 55°C
T A = 25°C
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
G7–2/2
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