LRC BAV74LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
1
R
F
FM(surge)
D
θJA
D
θJA
stg
ANODE
2
ANODE
50 Vdc
200 mAdc
500 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
3
CATHODE
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
BAV74LT1
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) ( EACH DIODE )
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 5.0 µAdc)
(BR)
Reverse Voltage Leakage Current I
(V R = 50 Vdc, T J = 125°C) — 100
(V R = 50Vdc) — 0.1
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage V
(I F = 100 mAdc) — 1.0
Reverse Recovery Time
(I F=IR=10mAdc, I
=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω)
R(REC)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)
R
C
D
F
t
rr
50 — Vdc
— 2.0 pF
— 4.0 ns
µAdc
Vdc
G6–1/2
LESHAN RADIO COMPANY, LTD.
Curves Applicable to Each Anode
BAV74LT1
100
T A = 85°C
10
T A = – 40°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T A = 25°C
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Forward V oltage
1.0
0.9
0.8
10
T A = 150°C
1.0
0.1
T A = 125°C
T A = 85°C
T A = 55°C
0.01
, REVERSE CURRENT (µA)
R
I
0.001
01020304050
V R , REVERSE VOLTAGE (VOLTS)
T A = 25°C
Figure 3. Leakage Current
0.7
TOTAL CAPACITANCE (pF)
T
C
0.6
02 468
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
G6–2/2
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