LRC BAV70WT1 Datasheet

Dual Switching Diodes

DEVICE MARKING

BAV70WT1 = A4

MAXIMUM RA TINGS (T

Rating Symbol Max Unit

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ, Tstg –55 to +150 °C

= 25°C)

A

(2)

TA = 25°C

R

F

FM(surge)

(1)

P

D

θJA

D

θJA

70 Vdc
200 mAdc
500 mAdc

200 mW

0.625 °C/W
300 mW

417 °C/W

LESHAN RADIO COMPANY, LTD.

BAV70WT1

3

1

2

CASE 419–04, STYLE 5

SOT–323 (SC–70)

ANODE
1

CATHODE

ANODE

2

3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage V

(I

= 100 µAdc)

(BR)

(BR)

Reverse V oltage Leakage Current

(VR = 70 Vdc) I
(VR = 50 Vdc) I

Diode Capacitance C

R1

R2

D

(VR = 0, f = 1.0 MHz)

Forward Voltage V

F

(IF = 1.0 mAdc) — 715
(IF = 10 mAdc) — 855
(IF = 50 mAdc) — 1000
(IF = 150 mAdc) — 1250

Reverse Recovery Time t

(IF= IR=10 mAdc, RL= 100Ω, I

= 1.0 mAdc) (Figure 1)

R(REC)

Forward Recovery Voltage V

rr

RF

(IF = 10 mAdc, tr = 20 ns) (Figure 2)

1. FR–5 = 1.0 × 0.75 × 0.062 in.

2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.

3.For each individual diode while the seeond diode is unbiased.

70 — Vdc

— 5.0 µAdc
— 100 nAdc
— 1.5 pF

— 6.0 ns

— 1.75 V

mVdc

BAV70WT1–1/3

Fig

R

S

= 50 Ω

LESHAN RADIO COMPANY, LTD.

BAV70WT1

BAV70

SAMPLING

I

F

OSCILLOSCOPE

= 50 Ω

R

L

t

r

t

p

I

10%

V

R

90%

+I

F

t

rr

OUTPUT PULSE

10%OF

V

100

R

INPUT PULSE

Figure 1. Recovery Time Equivalent Test Circuit

1 KΩ 450 Ω

R

= 50 Ω

S

BAV70

SAMPLING

OSCILLOSCOPE

R

= 50 Ω

L

I

V

90%

V

FR

10%

t

t

r

t

p

INPUT PULSE

ure 2.

OUTPUT PULSE

t

BAV70WT1–2/3