LRC BAV70LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
1
3
CATHODE
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
ANODE
2
ANODE
R
F
70 Vdc
200 mAdc
500 mAdc
D
θJA
D
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
BAV70LT1
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 100 µAdc)
(BR)
Reverse Voltage Leakage Current I
(V R = 25 Vdc, T J = 150°C) — 60
(V R = 70 Vdc) — 2.5
(V R = 70 Vdc, T J = 150°C) — 100
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage V
(I F = 1.0 mAdc) — 715
(I F = 10 mAdc) — 855
(I F = 50 mAdc) — 1000
(I F = 150 mAdc) — 1250
Reverse Recovery Time R L = 100 Ω
(I F = I R = 10 mAdc, V R = 5.0 Vdc, I
= 1.0 mAdc) (Figure 1)
R(REC)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)
R
C
D
F
t
rr
70 — Vdc
— 1.5 pF
— 6.0 ns
µAdc
mVdc
G5–1/1
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