LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features:
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Low Leakage Current Applications
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Medium Speed Switching Times
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Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
1
3
CATHODE
ANODE
2
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
R
F
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board
TA = 25°C
Derate above 25°C 1.8 mW°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate
(2)
TA = 25°C
Derate above 25°C 2.4 mW°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
(1)
P
D
θJA
D
θJA
stg
DEVICE MARKING
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (VR = 70 Vdc) I
Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C) — 80
Diode Capacitance (V R = 0 V, f = 1.0 MHz) C
Forward Voltage (I F = 1.0 mAdc) V
Forward Voltage (I F = 10 mAdc) — 1000
Forward Voltage (I F = 50 mAdc) — 1100
Forward Voltage (I F = 150 mAdc) — 1250
Reverse Recovery Time R L = 100 Ω t
(I F = I R = 10 mAdc) (Figure 1)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 100 µAdc) V
(BR)
(BR)
70 — Vdc
R
D
F
rr
— 5.0 nAdc
— 2.0 pF
— 900 mVdc
— 3.0 µs
BAV170LT1
1
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
70 Vdc
200 mAdc
500 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
-55 to +150 °C
3
G8–1/2
LESHAN RADIO COMPANY, LTD.
BAV170LT1
+10 V
50 Ω OUTPUT
PULSE
GENERAT OR
820 Ω
2.0 k
t
100 µH
0.1 µF
t
INPUT SIGNAL
V
R
r
10%
90%
I
F
0.1µF
D U T
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
I
F
t
rr
I
R
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i
R(REC)
i
= 1.0 mA
R(REC)
= 1.0 mA)
t
G8–2/2