LRC BAT54RSLT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
BAT54RSLT1
30 VOLTS
DUAL HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
1
ANODE
3
CAHODE/ANODE
2
CATHODE
DEVICE MARKING
BAT54S = LD3
MAXIMUM RA TINGS (T
Reverse Voltage V
Forward Power Dissipation P
@ T A = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction T
Temperature Range –55 to +125 °C
Storage T emperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I R = 10 µA) V
Total Capacitance (V R = 1.0 V , f = 1.0 MHz) C
Reverse Leakage (V R = 25 V) I
Forward Voltage (I F = 0.1 mAdc) V
Forward Voltage (I F = 30 mAdc) V
Forward Voltage (I F = 100 mAdc) V
Reverse Recovery Time
(I F = I R = 10 mAdc, I
Forward Voltage (I F = 1.0 mAdc) V
Forward Voltage (I F = 10 mAdc) V
= 125°C unless otherwise noted)
J
Rating Symbol Value Unit
30 Volts
–55 to +150 °C
30 — — Volts
T
— 7.6 10 pF
— 0.5 2.0 µAdc
F
F
F
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
F
F
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
= 1.0 mAdc) Figure 1
R(REC)
R
F
J
stg
= 25°C unless otherwise noted) ( EACH DIODE )
A
(BR)R
R
t
rr
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
G12–1/1
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