Schottky Barrier Diodes
LESHAN RADIO COMPANY, LTD.
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
ORDERING INFORMATION
Device Package Shipping
BAT54LT1 SOT–23 3000/T ape & Reel
Preferred: devices are recommended choices for future use and best overall value.
DEVICE MARKING
BAT54LT1 = JV3
MAXIMUM RA TINGS (T
Rating Symbol Max Unit
Reverse Voltage V
Forward Power Dissipation P
@ T A = 25°C 200 mW
Derate above 25°C 2.0 mW/°C
Forward Current(DC) I
Junction T emperature T
Storage T emperature Range T
= 125°C unless otherwise noted)
J
R
F
F
J
stg
30 Volts
200Max mA
125Max °C
–55 to +150 °C
BAT54LT1
30 VOLTS SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 318, STYLE 8
SOT–23 (TO–236AB)
1
CATHODE
3
ANODE
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I R = 10 µA) V
Total Capacitance (V R = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (V R = 25 V) I
Forward Voltage (I F = 0.1 mAdc) V
Forward Voltage (I F = 30 mAdc) V
Forward Voltage (I F = 100 mAdc) V
Reverse Recovery Time
(I F = I R = 10 mAdc, I
= 1.0 mAdc, Figure 1)
R(REC)
Forward Voltage (I F = 1.0 mAdc) V
Forward Voltage (I F = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I
(BR)R
T
R
F
F
F
t
rr
F
F
F
FRM
FSM
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 0.8 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
BAT54LT1–1/2
+10 V
820 Ω
2.0 k
100 µH
LESHAN RADIO COMPANY, LTD.
BAT54LT1
I
t
t
I
F
0.1µF
r
10%
t
p
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERATOR
0.1 µF
D.U.T.
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
150°C
125°C
1.0
85°C
25°C
– 40°C
, FORWARD CURRENT (mA)
0.1
F
I
0 0.1 0.2 0.3 0.4 0.5 0.6
–55°C
VF , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward V oltage
INPUT SIGNAL
V
R
is equal to 10mA.
R(peak)
, REVERSE CURRENT (µA)
I
90%
1000
I
R
(I F = I R = 10 mA; MEASURED
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
= 1.0 mA
T A = 150°C
100
10
1.0
0.1
0.01
R
0.001
0 5 10 15 20 25 30
VR , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
T A = 125°C
T A = 85°C
T A = 25°C
14
12
10
8
6
4
2
TOTAL CAPACIT ANCE (pF)
T
0
C
0 5 10 15 20 25 30
VR , REVERSE VOLTAGE (VOLTS)
Figure 4. T otal Capacitance
BAT54LT1–2/2