LRC BAS70LT1 Datasheet
SCHOTTKY Barrier Diode
LESHAN RADIO COMPANY, LTD.
BAS70LT1
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward V oltage — 0.75 Volts (Typ) @ I
DEVICE MARKING
BAS70LT1= BE
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Reverse Voltage V
Forward Power Dissipation P
@ TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage
T emperature Range
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 50 V) I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Voltage (IF = 15 mAdc) V
= 150°C unless otherwise noted)
J
R
F
TJ, T
stg
= 25°C unless otherwise noted)
A
(VR = 70V) — 10
= 10 mAdc
F
70 Volts
–55 to +150 °C
(BR)R
T
R
F
F
F
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
70V SCHOTTKY BARRIER DIODES
*
ANODE
1
70 — Volts
— 2.0 pF
— 0.1 µAdc
— 410 mVdc
— 750 mVdc
— 1.0 Vdc
CATHODE
3
BAS70LT1–1/2
LESHAN RADIO COMPANY, LTD.
BAS70LT1
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current
1.4
1.2
1.0
100
10
1.0
0.1
, REVERSE CURRENT (µ A)
R
I
0.01
0.001
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (V)
Figure 2. Reverse Current Versus Reverse Voltage
0.8
0.6
0.4
, CAPACITANCE (pF)
T
0.2
C
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Current
BAS70LT1–2/2
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