LRC BAS21LT1 Datasheet
High Voltage Switching Diode
LESHAN RADIO COMPANY, LTD.
3
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
R
F
FM(surge)
DEVICE MARKING
BAS21LT1 = JS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
1
ANODE
250 Vdc
200 mAdc
625 mAdc
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
BAS21LT1
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I
(V R = 200Vdc) — 1.0
(V R = 200Vdc, T J = 150°C) — 100
Reverse Breakdown Voltage
BR
(I
= 100 µAdc)
Forward Voltage V
(I F = 100 mAdc) — 1000
(I F = 200 mAdc) — 1250
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Reverse Recovery Time
(I F = I R = 30mAdc, R L = 100 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
V
(BR)
F
C
D
t
rr
250 — Vdc
— 5.0 pF
—50ns
µAdc
mV
G3–1/2
LESHAN RADIO COMPANY, LTD.
BAS21LT1
+10 V
50 Ω OUTPUT
PULSE
GENERAT OR
820 Ω
2.0 k
t
100 µH
0.1 µF
I
F
D.U.T.
0.1µF
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
INPUT SIGNAL
V
R
10%
90%
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 30 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
»
t
p
rr
is equal to 30 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
I
F
t
rr
I
R
OUTPUT PULSE
(I F = I R = 30 mA; MEASURED
at i
R(REC)
i
= 3.0 mA
R(REC)
= 3.0 mA)
t
G3–2/2
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