LRC BAS16LT1 Datasheet
Switching Diode
LESHAN RADIO COMPANY, LTD.
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
FM(surge)
R
F
75 Vdc
200 mAdc
500 mAdc
DEVICE MARKING
BAS16LT1 = A6
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
BAS16LT1
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I
(V R = 75Vdc) — 1.0
(V R = 75 Vdc, T J = 150°C) — 50
(V R = 25 Vdc, T J = 150°C) — 30
Reverse Breakdown Voltage
(I
= 100 µAdc)
BR
Forward Voltage V
(I F = 1.0 mAdc) — 715
(I F = 10 mAdc) — 855
(I F = 50 mAdc) — 1000
(I F = 150 mAdc) — 1250
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20ns )
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
V
(BR)
F
C
D
V
FR
t
rr
Q
S
75 — Vdc
— 2.0 pF
–- 1.75 Vdc
— 6.0 ns
—45pC
µAdc
mV
G2–1/2
+10 V
820 Ω
2.0 k
100 µH
LESHAN RADIO COMPANY, LTD.
BAS16LT1
I
t
t
I
F
0.1µF
r
10%
t
p
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERAT OR
0.1 µF
D.U.T.
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
T A= 85°C
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
TA= – 40°C
T A= 25°C
INPUT SIGNAL
V
R
is equal to 10 mA.
R(peak)
10
1.0
0.1
0.01
, REVERSE CURRENT (µA)
R
I
0.001
90%
I
R
(I F = I R = 10 mA; MEASURED
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
= 1.0 mA
T A = 150°C
T A = 125°C
T A = 85°C
T A = 55°C
T A = 25°C
010 20 30 4050
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward V oltage
0.68
0.64
0.60
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
02 4 6 8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
G2–2/2
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