Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
LESHAN RADIO COMPANY, LTD.
BAS1 16L T1
3
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
FM(surge)
R
F
75 Vdc
200 mAdc
500 mAdc
DEVICE MARKING
BAS1 16LT1 = JV
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
556 °C/W
300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
θJA
stg
417 °C/W
–55 to +150 °C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (V R = 75 Vdc ) I
R
(V R = 75 Vdc , T J =150°C) –– 80
Reverse Breakdown Voltage
(I
= 100 µAdc)
BR
Forward Voltage (I F = 1.0 mAdc) V
V
(BR)
F
(I F = 10 mAdc) — 1000
(I F = 50 mAdc) –– 1100
(I F = 150 mAdc) — 1250
Diode Capacitance(V R = 0, f = 1.0 MHz) C
Reverse Recovery Time
(I F = I R = 10mAdc, )( Figure 1)
D
t
rr
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–– 5.0 nAdc
75 — Vdc
–– 900 mV
— 2.0 pF
— 3.0 µs
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
G4–1/2
LESHAN RADIO COMPANY, LTD.
BAS116LT1
+10 V
50 Ω OUTPUT
PULSE
GENERAT OR
820 Ω
2.0 k
100 µH
0.1 µF
I
F
I
R
(I F = I R = 10 mA; MEASURED
I
F
D.U.T.
0.1µF
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
INPUT SIGNAL
V
R
10%
90%
t
t
p
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
»
t
p
rr
is equal to 10mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
t
rr
i
R(REC)
OUTPUT PULSE
at i
= 1.0 mA)
R(REC)
t
= 1.0 mA
G4–2/2